Si RFIC상에서 주기적 구조를 이용한 코프레너형 전송선로의 기본특성연구
A Study on Basic Characteristics of a Coplanar-type Transmission Line Employing Periodic Structure on Si RFIC
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초록
In this study, a short-wavelength coplanar-type transmission line employing periodic ground structure (PGS) was developed for application to miniaturized on-chip passive component on Si Radio Frequency Integrated Circuit (RFIC). The transmission line employing PGS showed shorter wavelength and lower characteristic impedance than conventional coplanar-type transmission line. The wavelength of the transmission line employing PGS structure was 57 % of the conventional coplanar-type transmission line on Si substrate. Using the theoretical analysis, basic characteristics of the transmission line employing PGS (e.g., bandwidth, loss, impedance, and resonance characteristics) were also investigated in order to evaluate its suitability for application to a development of miniaturized passive on-chip components on silicon RFIC. According to the results, the bandwidth of the transmission line employing PGS was more than 895 ㎓ as long as T is less than 20 ㎛, and the resonance characteristic was observed in 1239 ㎓, which indicates that the PPGM structure is a promising candidate for application to a development of miniaturized on-chip passive components on Si RFIC.
Abstract
In this study, a short-wavelength coplanar-type transmission line employing periodic ground structure (PGS) was developed for application to miniaturized on-chip passive component on Si Radio Frequency Integrated Circuit (RFIC). The transmission line employing PGS showed shorter wavelength and lower characteristic impedance than conventional coplanar-type transmission line. The wavelength of the transmission line employing PGS structure was 57 % of the conventional coplanar-type transmission line on Si substrate. Using the theoretical analysis, basic characteristics of the transmission line employing PGS (e.g., bandwidth, loss, impedance, and resonance characteristics) were also investigated in order to evaluate its suitability for application to a development of miniaturized passive on-chip components on silicon RFIC. According to the results, the bandwidth of the transmission line employing PGS was more than 895 ㎓ as long as T is less than 20 ㎛, and the resonance characteristic was observed in 1239 ㎓, which indicates that the PPGM structure is a promising candidate for application to a development of miniaturized on-chip passive components on Si RFIC.
참고문헌 (10)
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