Study on Magnetic Behavior of Zn1-xMnxO Films Grown on Si and α-Al2O3 Substrates by Sol-gel Method and Powders
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We report on the ferromagnetic characteristics of Zn1-xMnxO films (x = 0.3) prepared by sol-gel method on the silicon and (0001) α-Al2O3 substrates at the annealing temperature of 700℃. Magnetic measurements show that Curie temperature (TC) and the coercive field (HC) for the film on the silicon are about 32 K and about 275 Oe, while those for that on the sapphire are about 32 K and 425 Oe, respectively. Energy dispersive spectroscopy and transmission electron microscopy measurements suggest that ferromagnetic precipitates originated by manganese oxide compound formed at the interfaces of the both substrates may be responsible for the observed ferromagnetic behavior of the films. Electron paramagnetic resonance study of the powders up to the concentration of x=0.15 supports the result.
Abstract
We report on the ferromagnetic characteristics of Zn1-xMnxO films (x = 0.3) prepared by sol-gel method on the silicon and (0001) α-Al2O3 substrates at the annealing temperature of 700℃. Magnetic measurements show that Curie temperature (TC) and the coercive field (HC) for the film on the silicon are about 32 K and about 275 Oe, while those for that on the sapphire are about 32 K and 425 Oe, respectively. Energy dispersive spectroscopy and transmission electron microscopy measurements suggest that ferromagnetic precipitates originated by manganese oxide compound formed at the interfaces of the both substrates may be responsible for the observed ferromagnetic behavior of the films. Electron paramagnetic resonance study of the powders up to the concentration of x=0.15 supports the result.
참고문헌 (6)
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