U형 Sampled Grating DBR 레이저 다이오드의 설계 및 분석
Design and Analysis of U-shaped Sampled Grating Distributed Bragg Reflector Lasers
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초록
U형 구조의 SGDBR (Sampled Grating Distributed Bragg Reflector) 레이저 다이오드를 설계하고, 시간 영역 시뮬레이션 방법으로 해석하였다. U형 구조의 SGDBR 레이저 다이오드는 SGDBR, 능동, 수동, TIR (Total Internal Reflection) 거울 영역들로 이루어져 있어서, 각 영역들 간의 결합 손실의 영향을 면밀히 고려하여야 한다. 설계된 U형 SGDBR 레이저 다이오드의 파장 가변범위는 1525 nm에서부터 1570 nm 로서 시뮬레이션을 통하여 확인하였다. 설계 튜닝 범위에서 완전한 레이저 다이오드 특성을얻기 위해서는, 미러 영역에서의 손실은 약 2 dB 이하이고, 능동 및 수동 영역 간 butt 결합에서의 매질 간 굴절률 차이는 0.1이하를 유지하도록 도파 구조가 설계되어야 한다.
Abstract
A widely tunable U-shaped SGDBR (Sampled Grating Distributed Bragg Reflector) laser diode is designed and analyzed bymeans of a time-domain simulation. The U-shaped SGDBR laser diode consists of SGDBR, active, phase, and TIR (Total InternalReflection) mirror sections, so the coupling losses across the sections should be carefully considered. The tuning range of thedesigned U-shaped SGDBR laser is about 1525-1570 nm, which is confirmed by the simulation. The simulation results show thatthe loss in the TIR mirror region should be less than about 2 dB, and the refractive-index difference at the butt coupling betweenthe passive and active regions should be less that 0.1, to provide the complete tuning range.
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