A CMOS LiDAR Sensor OEIC for Elder-Care Systems
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In this paper, an optoelectronic integrated circuit (OEIC) by utilizing a 180-nm CMOS technology for a linear LiDAR sensor in the applications of elder-care systems is presented. It consists of an on-chip avalanche photodiode (APD) a voltage-mode linear transimpedance amplifier, a post-amplifier, a limiting amplifier, and a 50-Ω buffer. Post-layout simulation results show that the proposed OEIC achieves 96-dBΩ transimpedance gain, 780-MHz bandwidth even with 3-pF photodiode capacitance, 5.08-pA/√Hz noise current spectral density, and 29.2-mW power dissipation. The entire chip includes 4-channel arrays, hence occupying the area of 2.0 x 2.5 mm2 together with I/O pads.
Abstract
In this paper, an optoelectronic integrated circuit (OEIC) by utilizing a 180-nm CMOS technology for a linear LiDAR sensor in the applications of elder-care systems is presented. It consists of an on-chip avalanche photodiode (APD) a voltage-mode linear transimpedance amplifier, a post-amplifier, a limiting amplifier, and a 50-Ω buffer. Post-layout simulation results show that the proposed OEIC achieves 96-dBΩ transimpedance gain, 780-MHz bandwidth even with 3-pF photodiode capacitance, 5.08-pA/√Hz noise current spectral density, and 29.2-mW power dissipation. The entire chip includes 4-channel arrays, hence occupying the area of 2.0 x 2.5 mm2 together with I/O pads.
참고문헌 (11)
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