4H-SiC기판 위의 자기구조화된 Ag/Ti 나노입자 제어를 위한 열처리 분석
Annealing Effect on controlling Self-Organized Ag/Ti Nanoparticles on 4H-SiC Substrate
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The effect of varying thickness of Ag/Ti metal bilayer and annealing time have investigated for controlling self-organized nanoparticles (NPs) on 4H-SiC substrate. In addition, Glass and Si substrate which have different surface energy from SiC were fabricated for analyzing interaction of agglomeration. The results of FE-SEM indicated the different formation behaviors of NPs in various ranges of fabrication condition. The surface energy was measured by using a Contact Angle Analyzer. The formation of network-like NPs was observed on Glass and 4H-SiC, respectively, whereas it was not the case on Si substrates. It has been found that the size of NPs increases with decreasing surface energy, due to particle size-dependent hydrophilic properties of substrates. The different formation behavior was explained by using Young`s equation for the contact angles between the metal and different substrates.
Abstract
The effect of varying thickness of Ag/Ti metal bilayer and annealing time have investigated for controlling self-organized nanoparticles (NPs) on 4H-SiC substrate. In addition, Glass and Si substrate which have different surface energy from SiC were fabricated for analyzing interaction of agglomeration. The results of FE-SEM indicated the different formation behaviors of NPs in various ranges of fabrication condition. The surface energy was measured by using a Contact Angle Analyzer. The formation of network-like NPs was observed on Glass and 4H-SiC, respectively, whereas it was not the case on Si substrates. It has been found that the size of NPs increases with decreasing surface energy, due to particle size-dependent hydrophilic properties of substrates. The different formation behavior was explained by using Young`s equation for the contact angles between the metal and different substrates.
참고문헌 (5)
- Liu X, "Band engineering of carbon nanotube field-effect transistors via selected area chemical gating", Appl Phys Lett, 86(24) (2005)
- Mohit Bhatnagar, "Comparison of 6H-SiC, 3C-SiC, and Si for Power Devices", IEEE Transactions on Electron devices, 40(3) (1993)
- Rongchao Jin, "What controls the melting properties of DNA-Linked Gold Nanoparticle Assemblies?", J. AM. CHEM. SOC, 125(6) (2003)
- Trent H. Galow, "Highly reactive heterogeneous Heck and hydrogenation catalysts constructed through bottom-up nanoparticle self-assembly", Chemical Communications (2002)
- 이태섭, "Ni", CNT, 전기전자학회논문지, pp.2014, 18(4)[DOI]