게이트 전류 감지 구조를 이용한 향상된 레귤레이션 특성의LDO regulator
LDO regulator with improved regulation characteristics using gate current sensing structure
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초록
게이트 전류 감지 구조는 LDO 레귤레이터가 오버슈트 또는 언더슈트 상황 발생 시 출력전압의 레귤레이션을 보다 효과적으로제어하기 위해 제안되었다. 기존의 전형적인 LDO 레귤레이터는 부하전류가 변화할 때 레귤레이션 전압 변화가 발생한다. 하지만게이트 전류 감지 구조를 이용하여 패스 트랜지스터에 있는 게이트 단자 전류를 공급/방전 함으로 인해 패스 트랜지스터의 동작 속도를 더욱 향상시킬 수 있다. 게이트 전류 감지 구조를 이용한 LDO 레귤레이터의 입력전압은 3.3 V ~ 4.5 V 이며 출력 전압은3 V이고 부하 전류는 최대 250 mA의 값을 갖는다. 시뮬레이션 결과, 부하 전류가 250 mA 까지 변화할 때 약 9 mV의 전압 변화값을 확인하였다.
Abstract
The gate current sensing structure was proposed to more effectively control the regulation of the output voltagewhen the LDO regulator occurs in an overshoot or undershoot situation. In a typical existing LDO regulator, theregulation voltage changes when the load current changes. However, the operation speed of the pass transistorcan be further improved by supplying/discharging the gate terminal current in the pass transistor using a gatecurrent sensing structure. The input voltage of the LDO regulator using the gate current sensing structure is 3.3 Vto 4.5 V, the output voltage is 3 V, and the load current has a maximum value of 250 mA. As a result of thesimulation, a voltage change value of about 12 mV was confirmed when the load current changed up to 250 mA.
참고문헌 (7)
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