유기 단극 소자의 트랩에 의한 전기적 특성 연구
Investigation of the effect of trap on the electrical properties of organic unipolar device
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우리는 유기 반도체를 사용한 단극 소자 구조에서 트랩 프로파일의 영향을 조사하였다. 트랩 프로파일을 제어하기 위해, 우리는 트랩을 삽입하기 위해 높은 최고 점유 분자 궤도(HOMO) 레벨로 도핑된 단일 정공 소자(HOD)를 제작하였다. 다양한 도핑 프로파일을가진 HOD를 제작하고 전류-전압 특성을 측정하여 유한 요소법을 기반으로 한 드리프트-확산 모델로 만든 시뮬레이션 결과에 맞게트랩 에너지 깊이와 트랩 밀도를 추출하였다. 실제 UPS로 측정한 트랩에너지 깊이와 잘 일치함을 확인하였으며, HOD 소자로부터 트랩 에너지 깊이와 밀도 추출이 가능함을 확인하였다. 이러한 시뮬레이션 기법을 활용한다면 실제 소자에서 측정이 어려운 트랩 준위의특성 인자를 추출하는데 활용할 수 있을 것으로 기대된다. 우리는 이 연구가 유기 광전자 소자에서 트랩 관련 현상에 대한 폭넓은 이해에 기여하여, 소자 엔지니어와 연구자들이 이러한 진보된 광전자 소자의 설계와 작동을 최적화하여 기여할 것이라고 생각한다.
Abstract
We investigated the effect of the trap profile in a unipolar device structure with an organic semiconductor. Tocontrol the trap profile, we fabricated hole-only devices (HODs) doped with a molecules with higher highestoccupied molecular orbital (HOMO) level to embed traps. The current-voltage characteristics of fabricated HODwith various doping profiles were compared with simulation results made by the drift-diffusion model based onthe finite element method. It was confirmed that the trap energy depth expected by UPS analysis was matched wellwith simulation results, and it was verified that trap energy depth and density could be extracted from the HODdevice. It is expected that this simulation technique can be used to extract characteristic parameters of trap levelsthat are difficult to measure in actual devices. We believe this study contributes to the broader understanding oftrap-related phenomena in organic optoelectronic devices, enabling device engineers and researchers to optimizethe design and operation of these advanced optoelectronic devices.
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