Electrical charateristics of MIS BST thin films
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Abstract
The variation of electrical properties of (Ba,Sr)TiO3 [BST] thin films for Metal-Insulator-Semiconductor (MIS)capacitors was investigated. BST thin films were deposited on p-Si(10) substrates by the RF magnetron sputtering withtemperature range of 500~600oC. The dielectric properties of MIS capacitors consisting of Al/BST/SiO2/Si sandwichstructure were measured for various conditions. We examined the characteristics of MIS capacitor with various oxygenpressure, substrate temperature and (Ba+Sr)/Ti ratio. It was found that the leakage curent was reduced in MIS capacitorwith high quality SiO2 layer was grown on bare p-Si substrate by thermal oxidation. The BST MIS structure showedrelatively high capacitance even though it is the combination of high-dielectric BST thin films and SiO2 layer. The chargestate densities of the MIS capacitors and Current-voltage characteristics of the MIS capacitor were investigated. By applyingSiO2 layer between BST thin films and Si substrate, low leakage current of 10-10 order was observed.
참고문헌 (6)
- T. Horikawa, "thin films by RF magnetron sput-tering Jpn. J. Appl. Phys. 32", pp.4126~ (1993)
- N. Abt, "RF sputteredBST thin films International Conference on Solid StateDevices and Materials", pp.189~ (1991)
- "opics in electronic ceramics IETransactions on Electrical Insulation 25", pp.3 935~ (1990)
- Y. Ohno, "ntergrated ferroelectrics as a strategic device Symp. on VLSI", pp.149~ (1994)
- K. Numata, "Analysis of the resistance of ST films Jpn. J. Appl.Phys. 32", pp.5245~ (1993)
- T. Kuroiwa, "Electri-cal properties of Sr TiO3 thin films by rf sputering", pp.3025~ (1992)