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스컬법에 의한 루틸 단결정 성장에 관한 연구

A study on the growth of rutile single crystal by skull melting method

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참고문헌

주제분류재료공학

초록

초기 RF 유도가열을 위해 Ti 금속링을 사용하여 스컬법에 의해 루틸 단결정을 성장시켰다. 성장시킨 단결정은 Ø5.5×1.0 mm의 wafer로 가공하였으며, 1300oC에서 15시간까지 대기중에서 열처리 하여 l = 200~25000 nm의 범위에서 투 광도를 비교하였다.

Abstract

Rutile single crystals were grown by the skull melting method. Ti metal ring was used for initial RF induction heating. The grown crystals were cut into wafer of 5.5 mm diameter and 1mm thickness. The wafers were annealed in air at 1300oC up to 15 hours and their transmittance spectra (l = 200~25000 nm) were obtained.

참고문헌 (15)

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