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타원 분광기를 이용한 CdTe/GaAs 박막의 복소 유전함수에 관한 연구

Complex dielectric function of CdTe/GaAs thin films studied by spectroscopic ellipsometry

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참고문헌

주제분류재료공학

초록

Hot-wall epitaxy법으로 GaAs 기판 위에 성장시킨 CdTe 박막을 실온에서 포톤에너지 1.5~5.5eV 영역에서 타원 분광기로 복소 유전함수를 구하였다 타원분광기의 스펙트럼에서는 E1, E1 + D1, E2의 임계점이 관찰 되었으며 이들 에너지 는 CdTe 박막의 두께가 증가함에 따라 감소하였다.

Abstract

Spectroscopic ellipsomerty measurements of the complex dielectric function of the CdTe thin films grown on GaAs(100) substrates by hot wall epitaxy have been performed in 1.5~5.5eV photon energy range at room temperature. The spectroscopic ellipsometer spectra revealed distinct structures at energies of the E1, E1 + D1, and E2 critical points. These energies were decreased with increasing thickness of CdTe thin films.

참고문헌 (15)

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