태양 전지용 CuGaSe2 단결정 박막 성장과 태양전지로의 응용
Growth of CuGaSe2 single crystal thin film for solar cell development and its solar cell application
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초록
CuGaSe2 단결정 박막은 수평 전기로에서 합성한 CuGaSe2 다결정을 증발원으로하여, hot wall epitaxy(HWE) 방법으로 증발원과 기판(반절연성 GaAs(100))의 온도를 각각 610oC, 450oC로 고정하여 단결정 박막을 성장하였다. 이때 단결정 박막의 결정성은 광발광 스펙트럼(PL)과 이중결정 X-선 요동곡선 (DCRC)으로 부터 구하였다. Hall 효과는 Van der Pauw 방법에 의해 측정되었으며, 293 K에서 운반자 농도와 이동도는 각각 4.87×1017/cm3, 129 cm2/V·s였다. n-CdS/p-CuGaSe2 이종접합 태양전지에 80 mW/cm2의 광을 조사시켜 최대 출력점에서 전압은 0.41 V, 전류밀도는 21.8 mA/cm2였고, fill factor는 0.75 그리고 태양전지 전력변환 효율은 11.17 % 였다.
Abstract
Single crystal CuGaSe2 layers were grown on thoroughly etched semi-insulating GaAs(100) substrate at 450oC with hot wall epitaxy (HWE) system by evaporating CuGaSe2 source at 610oC. The crystalline structure of the single crystal thin films was investigated by the photoluminescence (PL) and double crystal X-ray diffraction (DCXD). The carrier density and mobility of single crystal CuGaSe2 thin films measured with Hall effect by Van der Pauw method are 4.87?017 cm-3 and 129 cm2/V톝 at 293 K, respectively. The temperature dependence of the energy band gap of the CuGaSe2 obtained from the absorption spectra was well described by the Varshni뭩 relation, Eg(T) = 1.7998 eV - (8.7489?0-4 eV/K)T2/(T + 335 K). The voltage, current density of maxiumun power, fill factor, and conversion efficiency of n-CdS/p-CuGaSe2 heterojunction solar cells under 80 mW/cm2 illumination were found to be 0.41 V, 21.8 mA/cm2, 0.75 and 11.17 %, respectively.
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