알루미나와 실리콘 지지체에 종자결정에 의한 제올라이트 MFI 필름의 합성
Synthesis of zeolite MFI films on alumina and silicon supports using seed crystals
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Contiuous c-oriented zeolite MFI films (< 35 μm) were prepared by hydrothermal secondary growth of silicalite- 1 seed crystal in the surface of alumina porous substrate and silicon substrate. The supported films were characterized with scanning electron microscopy and X-ray diffraction. Effect of substrate surface roughness were investigated and a mechanism for c-oriented film formation and characteristic dom-like defects formation which is observed after seeding growth was discussed. The roughness of substrate plays an important role.
Abstract
Contiuous c-oriented zeolite MFI films (< 35 μm) were prepared by hydrothermal secondary growth of silicalite- 1 seed crystal in the surface of alumina porous substrate and silicon substrate. The supported films were characterized with scanning electron microscopy and X-ray diffraction. Effect of substrate surface roughness were investigated and a mechanism for c-oriented film formation and characteristic dom-like defects formation which is observed after seeding growth was discussed. The roughness of substrate plays an important role.
참고문헌 (10)
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