ICP 표면 처리된 Si 기판 위에 성장된 Ge 층의 초기 성장 상태 연구
Early stage of heteroepitaxial Ge growth on Si(100) substrate with surface treatments using inductively coupled plasma (ICP)
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초록
Inductively Coupled Plasma(ICP)를 이용하여 다양한 조건으로 표면 처리한 Si(100) 기판 위에 Low Pressure Chemical Vapor Deposition(LPCVD)를 이용하여 Ge 층을 이종접합 성장하고, Ge 층 성장 초기의 표면 상태를 Scanning Electron Microscopy(SEM)을 통해 분석하였다. ICP를 이용하여 표면 처리된 Si(100) 기판 위에 성장된 Ge 층의 경우 ICP 처리하지 않은 시편보다 Ge 성장율이 약 5배 이상 증가되었다. ICP 처리된 시편의 Ge 성장률 증가는 ICP 표면 처리 공정으로 Si 기판 표면에서 떨어져 나간 missing dimer가 Ge adatom들에 핵을 형성할 자리를 제공하여 Ge island의 형성과 융합을 촉진시키는 것으로 사료된다.
Abstract
We have investigated the effect of inductively coupled plasma (ICP) treatment on the early growth stage of heteroepitaxial Ge layers grown on Si(100) substrates using low pressure chemical vapor deposition (LPCVD). The Si(100)substrates were treated by ICP process with various source and bias powers, followed by the Ge deposition. The ICP treatment led to the enhancement in the coalescence of Ge islands. The growth rate of Ge on Si(100) with ICP surface treatment is about 5 times higher than that without ICP surface treatment. A missing dimer caused by the ICP surface treatment can act as a nucleation site for Ge adatoms, which could be responsible for the improvement in growth behavior of Ge on Si(100) substrates.
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