화학적 polishing 및 etching을 통한 RE : YAG (RE = Nd 3+ , Er 3+ , Yb 3+ ) 단결정의 표면 결함 분석
Analysis of surface defect in RE : YAG (RE = Nd 3+ , Er 3+ , Yb 3+ ) single crystal using chemical polishing and etching
0
조회
0
다운로드
0
인용
0
참고문헌
키워드
초록
Czochralski 법으로 성장한 RE : YAG (RE = Nd 3+ , Er 3+ , Yb 3+ ) 단결정의 표면 결함을 측정하는 chemical polishing 및 etching 조건에 대하여 조사하였다. 최적의 chemical polishing 조건은 시편을 수직 방향으로 고정하고 85 % H3PO4 용액에서 330 o C, 30분 동안 진행한 것이었다. 또한 최적의 chemical etching 조건은 85 % H3PO4 용액에서 260 o C, 1시간 동안 진행한 것이었고, (111) 면에 70~80 μm 크기의 삼각형 etch pit들이 관찰되었다. 결함 밀도 분석 결과, Nd(1 %) : YAG는1.9 × 10 3개/cm 2 , Er(7.3 %) : YAG는 4.3 × 10 2개/cm 2 , Yb(15 %) : YAG는 5.1 × 10 2개/cm 2로 측정되었다.
Abstract
The conditions for chemical polishing and etching technique were investigated to reveal surface defects in RE : YAG (RE = Nd3+, Er3+, Yb3+) single crystals grown by Czochralski method. The optimal condition for chemical polishing was in 85 % H3PO4 solution at 330oC for 30 minutes with a specimen fixed in the vertical direction. In addition, the optimal condition for chemical etching was in 85 % H3PO4 solution at 260oC for 1 hour, and 70~80 μm sized triangular etch pits were observed on (111) face. As a result of defect density analysis, 1.9 × 103/cm2 for Nd(1 %) : YAG, 4.3 × 102/cm2 for Er(7.3 %) : YAG, and 5.1 × 102/cm2 for Yb(15 %) : YAG were measured.
참고문헌 (12)
- A.A. Kaminski, "Laser crystals" (1981), Springer
- M. A. Dubinskii, "Spectroscopic analogy approach in selective search for new Ce3+-activated all-solid-state tunable ultraviolet laser materials", J. Mod. Opt, 45, pp.221~ (1998)
- Y. Shimony, "Growth and characterization of (Ho,Tm,Er) :YAG crystals for 2.09 μm laser", J. Appl. Phys, 68, pp.2966~ (1990)
- C. Belouet, "About crystalline perfection of Nd-doped YAG single crystals", J. Crystal Growth, 15, pp.188~ (1972)
- M. Gerber, "Optimum parameters to etch Nd : YAG crystals with orthphosphoric acid H3PO4", Optics & Laser Technology, 33, pp.449~ (2001)
- K. E. Shafer, "Strength enhancement of single crystal laser components", J. Mater. Res, 18, pp.2537~ (2003)
- S. Maekawa, "Etch pits at dislocations in yttriun aluminum garnet", J. Crystal Growth, 18, pp.99~ (1973)
- M. Świrkowski, "Investigation of structural, optical and lasing properties of YAG : Yb single crystals", Opto-Electronics Review, 13, pp.213~ (2005)
- S. Kostic, "Study of structural and optical properties of YAG and Nd : YAG single crystals", Materials Research Bulletin, 63, pp.80~ (2015)
- Y. Peizhi, "The growth defects in Czochralski-grown Yb : YAG crystal", J. Crystal Growth, 218, pp.87~ (2000)
- L. Burgess, "Orientation dependence of etch pit density in(111)and(211)CdZnTe everson etch", J. Electron. Mater, 44, pp.3277~ (2015)
- R.D. Shannon, "Revised effective ionic radii and systematic studies of interatomic distances in halides and chalcogenides", Acta Cryst. A, 32, pp.751~ (1976)