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Effects of substitution with La and V in Bi4Ti3O12 thin film by MOCVD using ultrasonic spraying
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Electrical properties and preparation of PLZT thin film by MOCVD using ultrasonic sprayingByung-OkPark, Jin-HongLee, Ki-HyunKim한국결정성장학회 · 한국결정성장학회지2002 · 제12권 제4호Effects of post-annealing and seeding layers on electrical properties of PLT thin films by MOCVD using ultrasonic sprayingByung-OkPark, Jin-HongLee, Ki-HyunKim한국결정성장학회 · 한국결정성장학회지2002 · 제12권 제5호Effect of pyrolysis temperature on Bi4Ti3O12/MgO(100) structures prepared by chemical solution deposition이영환, 정주현, 황규석청정에너지연구소 · Journal of Ceramic Processing Research2007 · 제8권 제2호Surface characteristics of Mn-substituted (K0.5Na0.5)(Nb0.995Mn0.005)O3 thin films deposited on Pt/Ti/SiO2/Si(100) substrates김연중한국표면공학회 · 한국표면공학회지2025 · 제58권 제5호Preparation of Field Effect Transistor with (Bi,La)Ti3O12 Gate Film on Y2O3/Si Substrate김용태, 박지호, 서강모, 서광종, 장영철, 장호정한국마이크로전자및패키징학회 · 마이크로전자 및 패키징학회지2005 · 제12권 제1호Microstructural, electrical, and ferroelectric properties of M0.5Bi4.5-xSmxTi4O15 (M = Na or K) thin filmsMin Hwan Kwak청정에너지연구소 · Journal of Ceramic Processing Research2017 · 제18권 제8호
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