High rate dry etching of Si in fluorine-based inductively coupled plasmas
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Four different Fluorine-based gases (SF6, NF3, PF5, and BF3) were examined for high rate Inductively Coupled Plasma etching of Si. Etch rates up to ~8 mm/min were achieved with pure SF6 discharges at high source power (1500 W) and pressure (35 mTorr). A direct comparison of the four feedstock gases under the same plasma conditions showed the Si etch rate to increase in the order BF3 < NF3 < PF5 < SF6. This is in good correlation with the average bond energies of the gases, except for NF3, which is the least strongly bound. Optical emission spectroscopy showed that the ICP source efficiently dissociated NF3, but the etched Si surface morphologies were significantly worse with this gas than with the other 3 gases.
Abstract
Four different Fluorine-based gases (SF6, NF3, PF5, and BF3) were examined for high rate Inductively Coupled Plasma etching of Si. Etch rates up to ~8 mm/min were achieved with pure SF6 discharges at high source power (1500 W) and pressure (35 mTorr). A direct comparison of the four feedstock gases under the same plasma conditions showed the Si etch rate to increase in the order BF3 < NF3 < PF5 < SF6. This is in good correlation with the average bond energies of the gases, except for NF3, which is the least strongly bound. Optical emission spectroscopy showed that the ICP source efficiently dissociated NF3, but the etched Si surface morphologies were significantly worse with this gas than with the other 3 gases.
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