비정질 실리콘의 부분적 알루미늄 유도 결정화 공정에서의 급속 열처리 적용 가능성
Application of rapid thermal annealing process to the aluminum induced crystallization of amorphous silicon thin film
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초록
박막 태양전지에 주로 적용되는 다결정 규소층을 AIC(Aluminum Induced Crystallization) 공정을 이용하여 제조하였다. 결정립의 확대를 위하여 selective diffusion barrier 사용하였다. 이 diffusion barrier는 Al2O3 막을 사용하였다. 공정시간의 단축을 위하여 열처리는 RTA(Rapid Thermal Annealing) 공정으로 진행하였다. 비정질 실리콘의 결정화는 XRD 측정을 통해 분석했다. 그 결과 500 o C에서 결정화되었으며, 결정 크기는 15.9 μm로 계산되었다.
Abstract
In this study, polycrystalline silicon thin film useful for the solar cells was fabricated by AIC(Aluminum Induced Crystallization) process. A diffusing barrier for this process is prepared with Al2O3. For the maximization of the grain size of the polycrystalline silicon, a selective blasting of the Al2O3 diffusing barrier was conducted before annealing treatment. The heat treatment for the activation of the amorphous-Si (a-Si) layer was carried out with Rapid Thermal Annealing (RTA) process. Crystallization of the a-Si layer was analyzed with XRD. It was confirmed that a-Si was crystallized at 500 o C and the silicon crystal is observed to be formed and the grain size of the polycrystalline silicon was observed to be 15.9 μm.
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