PVT 법으로 성장 된 bulk AlN 단결정의 열 산화 공정에 관한 연구
A study on the thermal oxidation process of bulk AlN single crystal grown by PVT
0
조회
0
다운로드
0
인용
0
참고문헌
키워드
초록
AlN의 열 산화 공정에서 발생하는 거동 및 메커니즘을 확인하기 위해 bulk AlN 단결정에 대해 대기분위기에서온도에 따라 열처리를 수행하였다. 800°C의 온도에서 bulk AlN의 본격적인 산화 및 Al-oxide 들의 성장이 일어난 것을 확인하였고, 온도가 증가함에 따라 산소 성분의 wt%가 증가하는 반면 질소 성분의 wt%는 감소하는 경향을 보였다. 900°C에서 열처리하는 경우, 성장 된 Al-oxide은 이웃한 Al-oxide와 merging되어 α-Al2O3 다결정을 형성하기 시작했다. 1000°C의 온도에서 열처리하는 동안, 육각 피라미드 형 α-Al2O3 다결정이 명확히 형성되었음을 확인하였다. X-선 회절 패턴 분석을 통해 bulk AlN의 온도에 따른 표면 결정 구조의 변화를 자세히 조사하였다.
Abstract
To analyze and describe the behavior and mechanisms occurring in the thermal oxidation process of AlN, bulk AlN single crystals were thermally treated with different temperatures. As a result, it was confirmed that full-scale oxidation of bulk AlN and growth of Al-oxide occurred from the temperature of 800°C, which confirmed that the weight% of O elements tended to increase while the N elements decreased with increasing the temperature. In the case of thermal treatment at 900°C, the grown Al-oxides were merged with neighboring Al-oxides and began to form α-Al2O3 poly-crystals. During thermal treatment at the temperature of 1000°C, hexagonal pyramidal shaped poly-crystalline α-Al2O3 was clearly observed. Through the X-ray diffraction pattern analysis, the changes of surface crystal structure according to the temperature of bulk AlN were investigated in detail.
참고문헌 (14)
- H. Kamata, "Single Crystal Growth of Aluminum Nitride", Fujikura Technical Review (2009)
- B. Luo, "High breakdown M-I-M structures on bulk AlN", Solid-State Electron, 46, pp.573~ (2002)
- G. A. Slack, "Nonmetallic crystals with high thermal conductivity", J. Phys. Chem. Solids, 34, pp.321~ (1973)
- S. Strite, "Gallium nitride, aluminum nitride and indium nitride : a review", J. Vac. Sci. Technol. B, 10, pp.1237~ (1992)
- S. Krukowski, "Thermal properties of the group III nitrides", EMIS Datarev. Ser, 23, pp.21~ (1999)
- O. Ambacher, "Growth and applications of group IIInitrides", J. Phys. D Appl. Phys, 31, pp.2653~ (1998)
- X. Hu, "AlGaN", GaN heterostructure field-effect transistors on single crystal bulk AlN, 2003, pp.82, 1299~
- H. C. Kang, "Synthesis of epitaxial γ-Al2O3 thin films by thermal oxidation of AlN", sapphire(0001) thin films, 2003, pp.77, 627~
- E. A. Chaowdhury, "Thermally oxidized AlN thin films for device insulators", Appl. Phys. Lett, 70, pp.2732~ (1997)
- J. K. Ho, "Low resistance ohmic contacts to p-type GaN achieved by the oxidation of Ni", Au films, 1999, pp.86, 4491~
- A. D. Katnani, "Kinetics and initial stages of oxidation of aluminum nitride : thermogravimetric analysis and X-ray photoelectron spectroscopy study", J. Vac. Sci. Technol. A, 5, pp.1335~ (1987)
- D. Suryanarayana, "Oxidation kinetics of aluminum nitride", J. Am. Ceram. Soc, 73, pp.1108~ (1990)
- K. Komeya, "Influence of water vapor on the oxidation of aluminum nitride powders", J. Aust. Ceram. Soc, 26, pp.177~ (1990)
- S. Ramanthan, "Oxidation behavior of aluminum nitride powder", Br. Ceram. Trans, 94, pp.74~ (1995)
