석영유리 도가니용 합성 실리카 분말의 하소공정에 관한 연구
A study on the calcination process of synthetic silica powder for quartz glass crucibles
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반도체 공정용 석영유리 도가니의 내측에 위치하는 투명층은 합성 실리카 분말을 원료로 사용하여 제조한다. 도가니의 투명층에는 다양한 원인에 기인하여 버블이 발생하는데, 버블은 도가니의 품질뿐만 아니라 실리콘 잉곳의 수율을 저하시키는 악영향을 미친다. 따라서 투명층의 원료인 합성 실리카 분말 역시 버블 생성 인자를 최소화하는 것이 주요 목 표이다. 이에 따라 합성 실리카 분말의 경우, 실라놀 그룹, 탄소계 불순물, 그리고 기공이 충분히 제거되어야만 한다. 본 연 구에서는 졸-겔법을 이용하여 합성 실리카 겔을 제조하고, 2단 하소공정에서 하소온도와 유지시간에 따른 탄소 함량과 비 표면적의 변화를 살펴보았다. 1단계 하소온도는 500°C~600°C, 2단계 하소온도는 1000°C~1100°C에서 수행하였으며, 유지시 간은 10분에서 최대 12시간까지 실시하였다. 1000°C에서 1시간 동안 하소한 분말의 탄소함량은 0.0031wt.%를 나타내었으 며, 1100°C에서 12시간 동안 하소한 분말의 비표면적은 16.6 m²/g을 나타내었다.
Abstract
The inside of a quartz glass crucible for semiconductor processing, called a transparent layer, is manufactured using synthetic silica powder. Bubbles existing in the transparent layer of the crucible cause a problem of reducing the quality of the crucible as well as the yield of the silicon ingot. Therefore, the main goal of the synthetic silica powder, which is the raw material of the transparent layer, is to minimize the bubble generation factor. For this purpose, in the case of synthetic silica powder, it is necessary to minimize silanol groups, carbon and pores. In this study, synthetic silica gel was prepared using the sol-gel method, and changes in carbon content and specific surface area were investigated according to calcination temperature and dwelled time in a two-stage calcination process. The first-stage calcination process was performed between 500°C and 600°C and the second-stage calcination process was performed between 1000°C and 1100°C. The dwelled time was carried out from 10 minutes to a maximum of 12 hours. The carbon content of the powder calcined at 1000°C for 1 hour was 0.0031 wt.%, and the specific surface area of the powder calcined at 1100°C for 12 hours was 16.6 m²/g.
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