HCl 용액을 이용한 α-Ga2O3 epitaxy 박막의 습식 식각
Wet etching of α-Ga2O3 epitaxy film using a HCl-based solution
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초록
35 % 농도의 염산 용액을 이용하여 α-Ga2O3 epitaxy 박막의 습식 식각을 수행하였다. 35 % 염산 용액의 온도가 증가함에 따라 α-Ga2O3 epitaxy 박막의 식각 속도가 증가하였고, 본 연구에서 시도한 가장 높은 온도인 75°C에서 119.6 nm/min의 식각 속도를 나타내었다. 식각 반응의 활성화 에너지는 0.776 eV로 계산되었고, HCl 용액에서의 습식 식각은 reactionlimited 반응 기구에 의해 지배됨을 확인하였다. 각 온도에서 식각된 표면들의 AFM 분석결과 식각 용액의 온도가 증가함에 따라 식각된 표면의 표면조도가 증가함을 알 수 있었다.
Abstract
Wet etching of α-Ga2O3 epitaxy film was performed using a 35 % hydrochloric (HCl) acid solution. As the temperature of the 35 % HCl solution increased, the α-Ga2O3 etch rate increased, and the etch rate of 119.6 nm/min was obtained at 75°C, the highest temperature examined in this work. The activation energy for etch reaction was determined to be 0.776 eV, and this suggests that the wet etching of α-Ga2O3 in the 35 % HCl solution was dominated by the reactionlimited mechanism. AFM analysis showed that the surface roughness of the etched surface increased as the temperature of the etchant solution increased.
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