저온 GaN의 성장 온도에 따른 에피택셜 GaN의 stress relaxation 효과

이주형; 이성철; 박재화; 오누리; 이승훈; 박형빈; 신란희

doi:10.6111/JKCGCT.2022.32.3.083

논문KCI 등재

저온 GaN의 성장 온도에 따른 에피택셜 GaN의 stress relaxation 효과

Effect of low-temperature GaN grown at different temperature on residual stress of epitaxial GaN

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키워드

Residual stress HVPE Low temperature GaN Nuclei density

주제분류재료공학

초록

이종 기판과 GaN의 물성 차이로 인해 발생하는 결함을 제어하기 위한 다양한 방법 중 동종 물질을 완충층으로사용하는 LT-GaN 방법을 사용하여 완충층과 성장 온도의 상관성을 자체 제작한 성장 장비를 통해 확인하고자 하였다. 성장 온도에 따라 표면에 형성된 LT-GaN 결정성에 변화가 있었으며, annealing 후 LT-GaN가 나타내는 결정성에 따라 epi-GaN의 응력 완화 효과에 차이점이 있었다. 반면 LT-GaN의 높은 결정성은 다결정을 형성하는 원인으로 작용하여 그 위에성장하는 epi-GaN의 결정질을 저해하는 결과를 유발하였다.

Abstract

To improve the crystallinity of GaN, there are researches on surface treatment to control the difference inphysical properties between GaN and heterogeneous substrate. ‘Low-temperature GaN (LT-GaN)’ is one of the ways tosolve the problem and we investigated the relationship between growth temperature and properties of LT-GaN in ourhomemade vertical type HVPE. The LT-GaN nuclei were formed on the sapphire surface at low growth temperatures andthey presented differences in the density and crystallinity depending on the growth temperature. Significantly, the stressrelaxation effect on the epitaxial GaN (epi-GaN) was affected by the crystallinity of LT-GaN. However, the highcrystallinity of LT-GaN exacerbated the crystal quality of epi-GaN because they worked as a catalyst and seed ofpolycrystalline.

참고문헌 (27)

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초록

Abstract

참고문헌 (27)

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