Skull melting법에 의한 Al2O3 파우더 용융
Melting of Al2O3 powder using the skull melting method
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초록
사파이어 단결정을 성장시키는 기존 합성방법들의 원료충진율을 높이기 위한 방법으로 스컬용융법을 사용하여Al2O3 파우더를 용융시켰다. 냉각도가니 크기는 내경 24 cm, 내부 높이 30 cm로서 2.75 MHz 발진주파수에서 15 kg의 Al2O3 파우더를 1시간 내에 모두 용융시켰으며, 3시간 동안 융액상태로 유지 후 자연냉각 시켰다. 냉각된 잉곳의 부분별 면밀도및 성분은 SEM-EDS를 통해 분석하였다. 잉곳의 면밀도 및 Al2O3 함량은 고주파유도가열 시 냉각도가니 내부에 형성되는온도 분포와 관련이 있으며, 온도가 높게 형성되었던 부분이 면밀도 및 순도가 높게 나타나는 경향을 보였다.
Abstract
The current study demonstrates an efficient procedure to create ingots from Al2O3 powder using the skull melting method to use these ingots as a starting material in conventional methods for growing synthetic single-crystal sapphire. Dimension of the cold crucible was 24 cm in inner diameter and 30 cm in inner height, 15 kg of Al2O3 powder was completely melted within 1 h at an oscillation frequency of 2.75 MHz, maintained in the molten state for 3 h, and finally air-cooled. The areal density and components of the cooled ingot by parts were analyzed through scanning electron microscopy with energy dispersive X-ray spectroscopy (SEM-EDS). The areal density and Al2O3 content of the ingot were related to the temperature distribution inside the cold crucible during high-frequency induction heating, and the area with high temperature was high tends to be high in areal density and purity.
참고문헌 (15)
- M. Wu, "Control of melt-crystal interface shape during sapphire crystal growth by heat exchanger method", J. Cryst. Growth, 474, pp.32~ (2017)
- M.J. Hur, "Crystal front shape control by use of an additional heater in a Czochralski sapphire single crystal growth system", J. Cryst. Growth, 474, pp.24~ (2017)
- G. Alombert-Goget, "Large Ti-doped sapphire single crystals grown by the kyropoulos technique for petawatt power laser application", Opt. Mater, 61, pp.21~ (2016)
- M.J. Hur, "The influence of crucible and crystal rotation on the sapphire single crystal growth interface shape in a resistance heated Czochralski system", J. Cryst. Growth, 385, pp.22~ (2014)
- M.S. Akselrod, "Modern trends in crystal growth and new applications of sapphire", J. Cryst. Growth, 360, pp.136~ (2012)
- W. Ma, "Temperature and thermal stress evolutions in sapphire crystal during the cooling process by heat exchanger method", J. Cryst. Growth, 474, pp.38~ (2017)
- V.M. Krymov, "Blocks and residual stresses in shaped sapphire single crystals", J. Cryst. Growth, 457, pp.315~ (2017)
- W. Ma, "Investigation of heat transfer and thermal stress during sapphire crystal growth process by heat exchanger method: Evaluation of radiation models", J. Cryst. Growth, 468, pp.910~ (2017)
- M. Wu, "Effects of crucible cover on heat transfer during sapphire crystal growth by heat exchanger method", J. Cryst. Growth, 404, pp.131~ (2014)
- R. Mogilevsky, "Sapphire:Relation between luminescence of starting materials and luminescence of single crystals", Opt. Mater, 31, pp.1880~ (2009)
- C. P. Khattak, "World’s largest sapphire for many applications", J. Cryst. Growth, 452, pp.45~ (2016)
- S. Berendts, "Growth of yttria-doped zirconium oxide nitride single crystals by means of reactive skull melting", J. Cryst. Growth, 336, pp.106~ (2011)
- X. Jiayue, "Industrial growth of yttriastabilized cubic zirconia crystals by skull melting process", J. Rare Earths, 27, pp.971~ (2009)
- C. Gross, "Power Consumption of Skull Melting, Part I : Analytical Aspects and Experiments", Cryst. Res. Technol, 34, pp.322~ (1999)
- R. F. Sekerka, "Instability phenomena during the RF heating and melting of ceramics", J. Cryst. Growth, 50, pp.787~ (1980)