밀리미터파 발진용 GaAs Gunn 다이오드 소자의 개발과 음성미분저항

참고문헌 (16)

1. B. K. Ridley, "The possibility of negative resistance effects in semiconductors", Proc. Phys. Soc. Lond.,, 통권 : 78, pp.293~ (1961)
2. C. Hilsum, "Transferred electron amplifiers and oscillators", Proc. IRE., 통권 : 50, pp.185~ (1962)
3. J. B. Gunn, "Microwave oscillation of current III-V semiconductors", Solid State Comm, 1, pp.88~ (1963)
4. W. Watanabe, "V-band planar Gunn oscillators and VCOs on AlN substrates using flip-chip bonding technology", IEEE MTT-S Digest, pp.13~16 (1999)
5. A. Nakagawa, "77GHz planar Gunn VCOs on AlN substrates using novel flip-chip InP Gunn diodes", IEEE MTT-S Digest, pp.1205~1208 (2000)
6. S. Sze, "Semiconductor devices. Physics and Technology" (1985), Wiley
7. P. T. Bulman, "Transferred Electron Devices" (1972), Academic Press
8. S. Hutchinson, "Implant isolation scheme for current confinement in graded-gap Gunn diodes", Electron Lett, 32, pp.851~ (1996)
9. NR Couch, "The use of linearly graded composition AlGaAs injectors for intervalley transfer in GaAs: theory and experiment", Solid-State Electron, 31(3-4), pp.613~616 (1988)
10. Simone Montanari, "High frequency investigation of graded gap injectors for GaAs Gunn diodes", Solid-State Electron, 49, pp.245~250 (2005)
11. T. W. Hickmott, "Negative charge, barrier heights, and the conduction-band discontinuity in AlxGa1-xAs capacitors", J. Appl. Phys, 57, pp.2844~2853 (1985)
12. Phillip D. Blais, "Edge acuity and resolution in positive type photoresist systems", Solid State Technology, 20, pp.76~85 (1977)
13. Il-Hyung Lee, "The fabrication of a sub-micro gate using IR process", proceedings on KITE Fall Conference, pp.356~358 (1992)
14. M. A. Harry, "The free-space oscillation of heterojunction GaAs", AlGaAs Gunn diodes as a design guide, 1999, pp.14, L19~L20
15. E. Alekseev, "Microwave potential of GaN-based Gunn devices", Electronics Letters, 36(2), pp.176~178 (2000)
16. O. Madelung, "Semiconductors-basic data", ~

관련 논문AI추천