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Anlytical Pinning-Voltage Model of a Pinned Photodiode in a CMOS Active Pixel Sensor

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초록

An analytical pinning-voltage model of a pinned photodiode has been proposed and derived. The pinning-voltage is calculated using doping profiles based on shallow- and exponential-junction approximations. Therefore, the derived pinning-voltage model is analytically expressed in terms of the process parameters of the implantation. Good agreement between the proposed model and simulated results has been obtained. Consequently, the proposed model can be used to predict the pinning-voltage and related performance of a pinned photodiode in a CMOS active pixel sensor.

Abstract

An analytical pinning-voltage model of a pinned photodiode has been proposed and derived. The pinning-voltage is calculated using doping profiles based on shallow- and exponential-junction approximations. Therefore, the derived pinning-voltage model is analytically expressed in terms of the process parameters of the implantation. Good agreement between the proposed model and simulated results has been obtained. Consequently, the proposed model can be used to predict the pinning-voltage and related performance of a pinned photodiode in a CMOS active pixel sensor.

참고문헌 (10)

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  4. J. Lai, "Reset and partition noise in active pixel image sensors", IEEE Trans. Electron Devices, 52, pp.2329~2332 (2005)
  5. H. Tian, "Analysis of temporal noise in CMOS photodiode active pixel sensor", IEEE J. Solid-State Circuits, 36, pp.92~101 (2001)
  6. T. Lule, "Sensitivity of CMOS based imagers and scaling perspectives", IEEE Trans. Electron Devices, 47, pp.2110~2122 (2000)
  7. Im Deok Jung, "Pixel-Structured Scintillator with Polymeric Microstructures for X-Ray Image Sensors", ETRI Journal, 30(5), pp.747~749 (2008), 한국전자통신연구원
  8. G.Dearmaley, "Ionimplantation" (1973), North-Holland
  9. R.C.Jaeger, "Introduction to microelectronic fabrication" (2002), Prentice Hall
  10. B. Streetman, "Solid state electronic devices", Prentice Hall

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