LAM 공정을 위한 Underpass를 갖지 않는 나선형 박막 인덕터의 주파수 특성
Frequency Characteristics of Spiral Planar Inductor without Underpass for LAM Process
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초록
본 논문에서 기존 반도체공정들이 갖는 리소그래피와 식각 등의 공정단계를 배제하는 direct-write 공정과 LAM(Laser Ablation of Microparticles) 공정을 이용하여 친환경적인 이점을 가질 수 있는 나선형 인덕터의 구조를 제안하고 주파수 특성을 확인하였다. 인덕터의 구조는 Si를 540㎛, SiO2를 3㎛으로 하였으며, Cu 코일의 폭과 선간의 간격은 LAM 공정과 direct-write 공정을 이용할 수 있도록 각각 30㎛으로 설정하여 2회 권선하였다. 나선형 박막 인덕터의 성능을 나타내는 인덕턴스, quality-factor, SRF에 대한 주파수 특성을 HFSS로 시뮬레이션 하였다. Underpass와 via가 제거된 인덕터는 300-800MHz 범위에서 1.11nH의 인덕턴스, 5GHz에서 최대 38 정도의 품질계수를 가지며, SRF는 18GHz로 시뮬레이션 결과를 얻었다. 반면에 underpass와 via를 가지는 일반적인 인덕터는 300-800MHz 범위에서 1.12nH의 인덕턴스, 5GHz에서 최대 35 정도의 품질계수를 가지며, SRF는 16GHz로 시뮬레이션 결과를 얻을 수 있었다.
Abstract
In this study, we propose that the structures of spiral inductors have the environment advantage utilizing direct-write and LAM(Laser Ablation of Microparticles) processes without process step of lithography and etching etc. of existing semiconductor process. The structures of inductors have Si thickness of 540㎛, SiO2 thickness of 3㎛. The width of Cu coils and the space between segments have 30㎛, respectively, using for direct-write and LAM processes. The performance of spiral planar inductors was simulated to frequency characteristics for inductance, quality-factor, SRF(Self- Resonance Frequency) using HFSS. The inductors without underpass and via have inductance of 1.11nH over the frequency range of 300 to 800 MHz, quality-factor of maximum 38 at 5 GHz, SRF of 18 GHz. Otherwise, inductors with underpass and via have inductance of 1.12nH over the frequency range of 300 to 800 MHz, quality-factor of maximum 35 at 5 GHz, SRF of 16 GHz.
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