Simulations for the cesium dynamics of the RF-driven prototype ion source for CRAFT N-NBI
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To realize an initial objective of the negative ion-based neutral beam injection (N-NBI) at the Comprehensive Research Facility for Fusion Technology (CRAFT) test facility, which targets an H0 beam power of 2 MW at an energy of 200–400 keV and a pulse duration of 100 s, it is crucial to study the cesium dynamics of the negative ion source. Here a numerical simulation program CSFC3D is developed and applied to simulate the distribution and time dynamics of cesium during short pulses. The calculations show that most of the cesium on the plasma grid (PG) area originates from the release of cesium that is accumulated within the ion source in the plasma phase. Increasing the wall temperature reduces the loss of cesium on the wall of the ion source. Furthermore, the thickness of the cesium monolayer is directly influenced by the PG temperature. Both simulated and experimental results demonstrate that maintaining the PG temperature between 180 ◦C and 200 ◦C is essential for enhancing the performance of the ion source and optimizing the cesium behavior.
Abstract
To realize an initial objective of the negative ion-based neutral beam injection (N-NBI) at the Comprehensive Research Facility for Fusion Technology (CRAFT) test facility, which targets an H0 beam power of 2 MW at an energy of 200–400 keV and a pulse duration of 100 s, it is crucial to study the cesium dynamics of the negative ion source. Here a numerical simulation program CSFC3D is developed and applied to simulate the distribution and time dynamics of cesium during short pulses. The calculations show that most of the cesium on the plasma grid (PG) area originates from the release of cesium that is accumulated within the ion source in the plasma phase. Increasing the wall temperature reduces the loss of cesium on the wall of the ion source. Furthermore, the thickness of the cesium monolayer is directly influenced by the PG temperature. Both simulated and experimental results demonstrate that maintaining the PG temperature between 180 ◦C and 200 ◦C is essential for enhancing the performance of the ion source and optimizing the cesium behavior.
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