Understanding the Growth Kinetics of Graphene on Cu and Fe2O3 Using Inductively-Coupled Plasma Chemical Vapor Deposition
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초록
High-quality graphene was synthesized on Cu foil and Fe2O3 film using CH4 gas via inductively-coupled plasma chemical vapor deposition (ICPCVD). The graphene film was formed on Fe2O3 at a temperature as low as 700°C. Few-layer graphene was formed within a few seconds and 1 min on Cu and Fe2O3, respectively. With increasing growth time and plasma power, the graphene thickness was controllably reduced and ultimately self-limited to a single layer. Moreover, the crystal quality of graphene was constantly enhanced. Understanding the ICPCVD growth kinetics that are critically affected by ICP is useful for the controllable synthesis of high-quality graphene on metals and oxides for various electronic applications.
Abstract
High-quality graphene was synthesized on Cu foil and Fe2O3 film using CH4 gas via inductively-coupled plasma chemical vapor deposition (ICPCVD). The graphene film was formed on Fe2O3 at a temperature as low as 700°C. Few-layer graphene was formed within a few seconds and 1 min on Cu and Fe2O3, respectively. With increasing growth time and plasma power, the graphene thickness was controllably reduced and ultimately self-limited to a single layer. Moreover, the crystal quality of graphene was constantly enhanced. Understanding the ICPCVD growth kinetics that are critically affected by ICP is useful for the controllable synthesis of high-quality graphene on metals and oxides for various electronic applications.
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