Wear Leveling Technique using Random Selection Method in Flash Storage
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초록
Recently, reliability has become more important as flash-based storage devices are actively used in cloud servers and data centers. Flash memory chips have limitations in reading/writing, so if writing is concentrated in one location, the chip can no longer be used. To solve this problem and improve reliability, it is necessary to equalize the wear of flash memory chips. However, in order to equalize the wear of flash memory with increasing capacity, the workload increases proportionally. In particular, when searching for a block with the maximum/minimum number of deletions for all blocks of a flash memory chip, the cost increases depending on the capacity of the storage device. In this paper, a random selection method of blocks was applied to solve the previous problem. When k is the randomly selected block, actual experimental results confirmed that searching all blocks with an k value of 4 or more yields similar results.
Abstract
Recently, reliability has become more important as flash-based storage devices are actively used in cloud servers and data centers. Flash memory chips have limitations in reading/writing, so if writing is concentrated in one location, the chip can no longer be used. To solve this problem and improve reliability, it is necessary to equalize the wear of flash memory chips. However, in order to equalize the wear of flash memory with increasing capacity, the workload increases proportionally. In particular, when searching for a block with the maximum/minimum number of deletions for all blocks of a flash memory chip, the cost increases depending on the capacity of the storage device. In this paper, a random selection method of blocks was applied to solve the previous problem. When k is the randomly selected block, actual experimental results confirmed that searching all blocks with an k value of 4 or more yields similar results.
참고문헌 (16)
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