The effect of the amount of activated carbon powder on the synthesis of SiC/SiO2 nanostructures via a chemical vapor growth method
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In this study, the effects of different amounts of activated carbon powder on the growth of SiC/SiO2 nanostructures were examined. The nanostructures were formed using a simple chemical vapor growth setup using only oxidized silicon (Si) wafers and activated carbon powder. The addition of carbon powder into the system led to the formation of four main SiC/SiO2 products namely nanograins, nanowires, nanowebs and nanocables along with other side products of SiO2 nanowires and nanoparticles, depending on their growth location on the oxidized Si substrates. The possible growth mechanisms for these nanostructures are discussed.
Abstract
In this study, the effects of different amounts of activated carbon powder on the growth of SiC/SiO2 nanostructures were examined. The nanostructures were formed using a simple chemical vapor growth setup using only oxidized silicon (Si) wafers and activated carbon powder. The addition of carbon powder into the system led to the formation of four main SiC/SiO2 products namely nanograins, nanowires, nanowebs and nanocables along with other side products of SiO2 nanowires and nanoparticles, depending on their growth location on the oxidized Si substrates. The possible growth mechanisms for these nanostructures are discussed.
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