Ceramic composites derived from polysilazane with the addition of silicon carbide
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Ceramic composites from the polysilazane with the addition of silicon carbide (SiC) was successfully sintered by a hot pressingfurnace at 1,600-1,800 ºC for 1 h under the applied pressure of 20 MPa in a nitrogen atmosphere. The addition of SiC did notinfluence the densification of sintered polysilazane. However, the phases generated during sintering were affected by theaddition of SiC, resulting in the multi-phases of sintered polysilazane/SiC composite. The formation of SiC, Si3N4, Si2N2O, andSiO2 phases were observed in the sintered polysilazane/SiC composite. The highest hardness of sintered polysilazane wasobtained with the addition of SiC sinter at 1,700 ºC, i.e., 24.3 ± 1.1 GPa, and decreased to 21.8 ± 0.7 GPa at 1,800 ºC. Thisis due to the sintered polysilazane/SiC composite at 1,700 ºC possess fine microstructure compared to 1,800 ºC. Meanwhile,the sintered polysilazane experienced significant grain growth at 1,700 ºC, thus the hardness of this sample was lower thansintered polysilazane/SiC composite.
Abstract
Ceramic composites from the polysilazane with the addition of silicon carbide (SiC) was successfully sintered by a hot pressingfurnace at 1,600-1,800 ºC for 1 h under the applied pressure of 20 MPa in a nitrogen atmosphere. The addition of SiC did notinfluence the densification of sintered polysilazane. However, the phases generated during sintering were affected by theaddition of SiC, resulting in the multi-phases of sintered polysilazane/SiC composite. The formation of SiC, Si3N4, Si2N2O, andSiO2 phases were observed in the sintered polysilazane/SiC composite. The highest hardness of sintered polysilazane wasobtained with the addition of SiC sinter at 1,700 ºC, i.e., 24.3 ± 1.1 GPa, and decreased to 21.8 ± 0.7 GPa at 1,800 ºC. Thisis due to the sintered polysilazane/SiC composite at 1,700 ºC possess fine microstructure compared to 1,800 ºC. Meanwhile,the sintered polysilazane experienced significant grain growth at 1,700 ºC, thus the hardness of this sample was lower thansintered polysilazane/SiC composite.
참고문헌 (23)
- R. Riedel, , J. Eur. Ceram. Soc, 15(8), pp.703~715 (1995)
- G. Boden, , J. Eur. Ceram. Soc, 18(10), pp.1461~1496 (1998)
- M. Zemanová, , J. Eur. Ceram. Soc, 22(16), pp.2963~2968 (2002)
- J. Wan, , J. Mater. Res, 15(8), pp.1657~1660 (2000)
- J. Wan, , Mater. Sci. Eng. A, 424(1-2), pp.105~116 (2006)
- J. Wan, , J. Am. Ceram. Soc, 89(1), pp.274~280 (2006)
- J. Lee, , J. Non. Cryst. Solids, 351(37-39), pp.2995~3005 (2005)
- A. Noviyanto, , Adv. Appl. Ceram, 115(5), pp.272~275 (2016)
- J. S. Nadeau, , Am. Ceram. Bull, 52(2), pp.170~174 (1973)
- M. L. Xie, , Fusion Eng. Des, 85(7-9), pp.964~968 (2010)
- Y. Lee, , Scr. Mater, 143, pp.188~190 (2018)
- A. Noviyanto, , Trans. Nonferrous Met. Soc. China, 23(2), pp.420~425 (2013)
- A. Noviyanto, , Makara J. Technol, 20(3), pp.109~113 (2016)
- Thomas A. Carlson, "Effects of time, temperature, and pressure on the microstructure of spark plasma sintered silicon carbide", Journal of Ceramic Processing Research, 16(3), pp.303~307 (2015), 청정에너지연구소[DOI]
- 안석환, "Weibull statistical analysis on mechanical properties of immersed silicon carbide in acidic and alkaline solution", Journal of Ceramic Processing Research, 17(9), pp.994~998 (2016), 청정에너지연구소[DOI]
- 정은진, "High-purity β-SiC powder for the single-crystal growth of SiC", Journal of Ceramic Processing Research, 15(6), pp.447~450 (2014), 청정에너지연구소[DOI]
- H. Xu, , J. Am. Ceram. Soc, 84(7), pp.1578~1584 (2001)
- M. F. Gonon, , J. Eur. Ceram. Soc, 15(6), pp.591~597 (1995)
- G. J. Zhang, , Mater. Sci. Eng. A, 328(1-2), pp.201~205 (2002)
- Z. K. Huang, , Ceram. Int, 10(1), pp.14~17 (1984)
- T. Hirata, , J. Eur. Ceram. Soc, 20(8), pp.1191~1195 (2000)
- S. Ordoñez, , J. Mater. Sci, 34(1), pp.147~153 (1999)
- Z. H. Liang, , Ceram. Int, 39(3), pp.2743~2751 (2013)