Experimental investigation on the dielectric and impedance properties of indium doped titanium dioxide ceramics
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Single-phased indium doped titanium dioxide (Ti1-xInxO2, x=0~5%) ceramics were synthesized by using solid-state reactionmethod in this study. The doping effect on the dielectric and impedance properties was investigated in a broad frequency rangefrom 102 Hz to 106 Hz. The observed dielectric behavior can be ascribed to the Universal Dielectric Response. In higherfrequency field, the dielectric permittivity varies slightly with the doping concentration x. However, the measured dielectricconstant increases significantly with the increase of doping concentration within lower frequency range. The charged grainboundarycores originated from the doping trivalent ion can be used to explain the results.
Abstract
Single-phased indium doped titanium dioxide (Ti1-xInxO2, x=0~5%) ceramics were synthesized by using solid-state reactionmethod in this study. The doping effect on the dielectric and impedance properties was investigated in a broad frequency rangefrom 102 Hz to 106 Hz. The observed dielectric behavior can be ascribed to the Universal Dielectric Response. In higherfrequency field, the dielectric permittivity varies slightly with the doping concentration x. However, the measured dielectricconstant increases significantly with the increase of doping concentration within lower frequency range. The charged grainboundarycores originated from the doping trivalent ion can be used to explain the results.
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