실리콘 슬러지로부터 실리콘의 電解回收
Recovery of Silicon from Silicon Sludge by Electrolysis
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초록
실리콘 웨이퍼공정에서 발생하는 실리콘 슬러지로부터 실리콘 및 탄화규소를 분리한 다음, 전해법으로 원소형태의 실리콘을 회수하는 연구를 수행하였다. 실리콘 슬러지의 주요 불순물은 절삭유, 금속불순물, 실리콘 및 실리콘 카바이드를 들 수 있다. 기계적선별법으로 분리한 실리콘, 탄화실리콘 복합물을 1,000℃에 1시간동안 염화·배소하여 응축하고 회수한 사염화실리콘을 이온성액체인 [Bmpy]Tf_2N에 용해하여 전해액으로 사용하였다. 순환전위법으로부터 [Bmpy]Tf_2N의 안정한 전압구간과 사염화실리콘을 용해한 [Bmpy]Tf_2N 전해액에서 실리콘의 환원으로 추정되는 환원피크를 얻을 수 있었다. 정전위법(−1.9 V vs. Pt-QRE)에서 1시간동안금 전극 상에 전해한 다음, 전극표면을 XRD, SEM-EDS 및 XPS 분석을 통하여 실리콘이 원소형태로 전착되었음을 확인하였으며,미량의 산소가 검출되는 것은 분석과정에서 시편이 공기 중에 노출되었기 때문으로 판단된다.
Abstract
As a recovery of elemental silicon from the sludge of Si wafer process, a process of mechanical separation-chlorine roastingelectrolysis has been suggested. The silicon sludge consisted of Si, SiC, machine oil, and metallic impurities. The oil and metal impurities was removed by mechanical separation. The Si-SiC mixture was converted to silicon chloride by chlorine roasting at 1,000℃ for 1 hr and the silicon chloride was dissolved into an ionic liquid of [Bmpy]Tf_2N as an electrolyte. Cyclic voltammetry results showed an wide voltage window of pure [Bmpy]Tf_2N and a reduction peak of elemental Si from [Bmpy]Tf_2N dissolved SiCl4 on Au electrode, respectively. The silicon deposits could be prepared on the Au electrode by the potentiostatic electrolysis of −1.9 V vs. Pt-QRE. The elemental silicon uniformly electrodeposited was confirmed by various analytical techniques including XRD, FE-SEM with EDS, and XPS. Any impurity was not detected except trace oxygen contaminated during handling for analysis.
참고문헌 (27)
- 장희동, "廢실리콘슬러지로부터 TMOS 및 실리카 나노粉末 製造", 자원리싸이클링, 16(5), pp.41~45 (2007), 한국자원리싸이클링학회
- Apparatus and Recycling Method of Silicon Sludge Waste, "K. Park", ~, pp.10- 0837346 (2008)
- 정구진, "실리콘 슬러지로부터 리튬電池 陰極用 Si-SiC-CuO-C 복합물의 合成", 자원리싸이클링, 19(4), pp.51~57 (2010), 한국자원리싸이클링학회
- 김희영, "태양전지용 폴리실리콘 제조", Korean Chemical Engineering Research(HWAHAK KONGHAK), 46(1), pp.37~49 (2008), 한국화학공학회
- H. St. Claire, "C.R. DeVille, and Hebd, Seances Acad", Seances, 39, pp.1854~ (1854)
- M. Dodero, "C.R. Hebd, and Seances Acad", Science, 199, pp.566~ (1934)
- D. Elwell, "Electrodeposition of solar silicon", Sol. Energy Materials, 6, pp.123~145 (1982)
- U. Cohen, "Silicon Epitaxial Growth by Electrodeposition from Molten Fluorides", J. Electrochem. Soc, 123, pp.381~383 (1976)
- D. Elwell, "Electrolytic production of silicon", J. Appl. Electrochem, 18, pp.15~22 (1988)
- A. K. Agrawal, "Electrodeposition of silicon from solutions of silicon halides in aprotic solvents", J. Electrochem. Soc, 128, pp.2292~2296 (1981)
- K. L. Carleton, "Electrochemical nucleation and growth of silicon in molten fluorides", J. Electrochem. Soc, 130, pp.782~786 (1983)
- R. Boen, "The electrodeposition of silicon in fluoride melts", J. Appl. Electrochem, 13, pp.277~288 (1983)
- R. C. De Mattei, "Electrodeposition of silicon at temperatures above its melting point", J. Electrochem. Soc, 128, pp.1712~1714 (1981)
- J. Gobet, "Electrodeposition of silicon from a nonaqueous solvent", J. Electrochem. Soc., 133, pp.322~ (1986)
- J. Gobet, "Electrodeposition of silicon from a nonaqueous solvent", J. Electrochem. Soc., 135, pp.109~112 (1988)
- J. P. Nicholson, "Electrodeposition of silicon from nonaqueous solvents", J. Electrochem. Soc., 152, pp.795~802 (2005)
- F. Endres, "Ionic Liquids: Solvents for the electrodeposition of metals and Semiconductors", Phys. Chem. Chem. Phys, 3, pp.144~154 (2002)
- A. P. Abbott, "Application of ionic liquids to the electrodeposition of metals", Phys. Chem. Chem. Phys., 8, pp.4265~4279 (2006)
- H. Ohno, "Electrochemical Aspects of Ionic Liquids", pp.100~ (2005), John Wiley & Sons
- T. Tsuda, "Electrochemistry of titanium and theelectrodeposition of Al-Ti Alloys in the Lewis acidicaluminum chloride-1-ethyl-3-methylimidazolium chloridemelt", J. Electrochem. Soc., 150, pp.234~243 (2003)
- J. K. Chang, "Electrodeposition of aluminum on magnesium alloy in aluminum chloride(AlCl3) 1-ethyl-3- methylimidazolium chloride(EMIC) ionic liquid and its corrosion behavior", Electrochem. Commun, 9, pp.1602~1606 (2007)
- A. E. Austin, "US Pat. 3,990,953 and Nov. 9 (1976) CA 86: 10098c", ~ (1976)
- E. R. Bucker, "US Pat. 4,192,720. Oct. 16 (1980) CA 92: 10098", ~ (1980)
- Y. Nishimura, "Electrochemical reduction of silicon chloride in a non-aqueous solvent", Electrochimca Acta, 53, pp.111~116 (2007)
- T. Munisamy, "Electrodeposition of Si from organic solvents and studies related to initial stages of Si growth", Electrochimca Acta, 55(11), pp.3797~3803 (2010)
- S. Z. El Abedin, "Electrodeposition of nanoscale silicon in a room temperature ionic liquid", lectrochem. Comm., 6, pp.510~514 (2004)
- J. Mallet, "Growth of silicon nanowires of controlled diameters by electrodeposition in ionic liquid at room temperature", Nano Lett, 8(10), pp.3468~3474 (2008)