전해액 첨가제를 이용한 고전계 양극산화의 자기정렬에 관한 연구
Extending the Self-ordering Regime of High-field Anodization by Using an Electrolyte Additive
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초록
옥살산 수용액에서의 전기화학적 양극산화에 의한 자기정렬된 알루미나 나노템플레이트의 제조에있어서 전해액 첨가제를 이용하여 기존 양극산화 법으로는 보고된 바 없는 160~200 V 범위의 자기정렬 구간을 관찰하였다. 고전계 양극산화와 펄스분리법 및 화학적 기공확장을 거쳐 생성된 자기정렬구조를 FE-SEM 으로 관찰한 결과 이 전압구간에서의 기공간격과 전압과의 관계는 2.2 nm/V 으로 기존 고전계 양극산화의 결과와 유사하게 나타남을 알 수 있었다. 또한 양극산화막의 성장속도는 약 60 μm/hr로 유사한 기공구조를 얻을 수 있는 인산 수용액에서의 연질 양극산화에 비해 약30배로 높은 것을 알 수 있었다. 이러한 고찰을 통하여 기공간격 300 nm 이상의 나노템플레이트를고속으로 제조할 수 있는 조건을 확립하였다.
Abstract
Using an electrolyte additive, we examined, for the first time, a novel self-ordering regime of 160~200 V in high-field anodization which had been used for a fast fabrication of self-ordered anodic alumina nanotemplate. FE-SEM analyses conducted after the high-field anodization, pulse detachment and chemical widening of pores showed the relationship of 2.2 nm/V in this voltage range, which was identical to the previously reported one in the literature. The growth rate of the alumina film was about 60 um/hr, which was 30 times faster than that of phosphoric acid mild anodization. This study provides a new process for the fast fabrication of nanotemplates with interpore distances larger than 300 nm.
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