수소 감지 성능 향상을 위한 Pd/TiO2 분말에서의 Al 도핑 효과
Al Doping Effect of Pd/TiO2 for Improved Hydrogen Detection
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TiO2 oxide semiconductor is being widely studied in various applications such as photocatalyst and photosensor. Pd/TiO2 gas sensor is mainly used to detect H2, CO and ethanol. This study focus on increasing hydrogen detection ability of Pd/TiO2 in room temperature through Al-doping. Pd/TiO2 was fabricated by the hydrothermal method. Contacting to Aluminum (Al) foil led to Al doping effect in Pd/TiO2 by thermal diffusion and enhanced hydrogen sensing response. TiO2 nanoparticles were sized at ~30 nm of diameter from scanning electron microscope (SEM) and maintained anatase crystal structure after Al doping from X-ray diffraction analysis. Presence of Al in TiO2 was confirmed by X-ray photoelectron spectroscopy at 73 eV. SEM-energy dispersive spectroscopy measurement also confirmed 2 wt% Al in Pd/TiO2 bulk. The gas sensing test was performed with O2, N2 and H2 gas ambient. Pd/Al-doped TiO2 did not response O2 and N2 gas in vacuum except H2. Finally, the normalized resistance ratio (RH2on/RH2off) of Pd/Al-doped TiO2 increases about 80% compared to Pd/TiO2.
Abstract
TiO2 oxide semiconductor is being widely studied in various applications such as photocatalyst and photosensor. Pd/TiO2 gas sensor is mainly used to detect H2, CO and ethanol. This study focus on increasing hydrogen detection ability of Pd/TiO2 in room temperature through Al-doping. Pd/TiO2 was fabricated by the hydrothermal method. Contacting to Aluminum (Al) foil led to Al doping effect in Pd/TiO2 by thermal diffusion and enhanced hydrogen sensing response. TiO2 nanoparticles were sized at ~30 nm of diameter from scanning electron microscope (SEM) and maintained anatase crystal structure after Al doping from X-ray diffraction analysis. Presence of Al in TiO2 was confirmed by X-ray photoelectron spectroscopy at 73 eV. SEM-energy dispersive spectroscopy measurement also confirmed 2 wt% Al in Pd/TiO2 bulk. The gas sensing test was performed with O2, N2 and H2 gas ambient. Pd/Al-doped TiO2 did not response O2 and N2 gas in vacuum except H2. Finally, the normalized resistance ratio (RH2on/RH2off) of Pd/Al-doped TiO2 increases about 80% compared to Pd/TiO2.
참고문헌 (11)
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