ZnO양자점 기반 센서의 초고감도 수소 검지 특성
Ultra Sensitive Detection of H2 in ZnO QD-based Sensors
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Interest and demand for hydrogen sensors are increasing in the field of H2 leakage detection during storage/transport/use and detection of H2 dissolved in transformer oil for safety issues as well as in the field of breath analysis for non-invasively diagnosing a number of disease states for a healthy life. In this study, various ZnO-based sensors were synthesized by controlling the reduction in crystallite size, decoration of Pt nanoparticles, doping of electron donating atoms, and doping of various atoms with different ionic radii. The sensing response of the various prepared ZnO-based nanoparticles and quantum dots (QDs) for 10 ppm H2 was investigated. Among the samples, the smallest-sized (3.5 nm) In3+ -doped ZnO QDs showed the best sensing response, which is superior to those in previously reported hydrogen sensors based on semiconducting metal oxides. The higher sensing response of In-doped ZnO QDs is attributed to the synergic effects of the increased number of oxygen vacancies, higher optical band gap, and larger specific surface area.
Abstract
Interest and demand for hydrogen sensors are increasing in the field of H2 leakage detection during storage/transport/use and detection of H2 dissolved in transformer oil for safety issues as well as in the field of breath analysis for non-invasively diagnosing a number of disease states for a healthy life. In this study, various ZnO-based sensors were synthesized by controlling the reduction in crystallite size, decoration of Pt nanoparticles, doping of electron donating atoms, and doping of various atoms with different ionic radii. The sensing response of the various prepared ZnO-based nanoparticles and quantum dots (QDs) for 10 ppm H2 was investigated. Among the samples, the smallest-sized (3.5 nm) In3+ -doped ZnO QDs showed the best sensing response, which is superior to those in previously reported hydrogen sensors based on semiconducting metal oxides. The higher sensing response of In-doped ZnO QDs is attributed to the synergic effects of the increased number of oxygen vacancies, higher optical band gap, and larger specific surface area.
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