열처리조건에 따른 VO2 후막 급변온도센서의 특성연구
Characterization of VO2 thick-film critical temperature sensors by heat treatment conditions
1
조회
0
다운로드
2
인용
0
참고문헌
초록
Abstract
For VO2 sensors applicable to temperature measurement by using the nature of semiconductor to metal transition, thecrystallinity, microstructure, and temperature vs. resistance characteristics were investigated systematically as a functionof the annealing condition. The starting materials, vanadium pentoxide (V2O5paste. This paste was scren-printed on Al2O3 substrates and then VO2 thick films were heat-treated at 450oC to 600oC,respectively, for 1 hr in N2 gas atmosphere for the reduction. As results of the temperature vs. resistance propertymeasurements, the electrical resistance of the V2O5 sensor in phase transition range was decreased by 103.9 order. Thepresented critical temperature sensor could be used in fire-protection and control systems.
참고문헌 (8)
- "“Influence of stoichiometry on the metal-semiconductor transition in vanadium dioxide”", pp.2201~2206 (1974)
- "“반도성 VO2계 급변온도센서의 전기적 특성”", 30(10), pp.866~870 (1993)
- "“Large modification of the metal-insulator transition temperature in strained VO2 films grown TiO2 substrates”", 63, pp.965~967 (2002)
- "“Structures and a two-band model for the system V1-xCrxO2”", pp.1323~1331 (1973)
- "“Vanadium dioxide thin films prepared by chemical vapor deposition from vanadium", pp.5073~5078 (1993)
- "“Properties of vanadium oxide thin films for ethanol sensor”", 15(1), pp.34~38 (1997)
- "“Valence reduction process from sol-gel V2O5 to VO2 thin films”", 191, pp.176~180 (2002)
- "“Vanadium oxides thin films and fixed-temperature heat sensor with memory”", 68, pp.338~343 (1998)