Wide Dynamic Range CMOS Image Sensor with Adjustable Sensitivity Using Cascode MOSFET and Inverter
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In this paper, a wide dynamic range complementary metal-oxide-semiconductor (CMOS) image sensor with the adjustable sensitivity by using cascode metal-oxide-semiconductor field-effect transistor (MOSFET) and inverter is proposed. The characteristics of theCMOS image sensor were analyzed through experimental results. The proposed active pixel sensor consists of eight transistors operatedunder various light intensity conditions. The cascode MOSFET is operated as the constant current source. The current generated fromthe cascode MOSFET varies with the light intensity. The proposed CMOS image sensor has wide dynamic range under the high illu- mination owing to logarithmic response to the light intensity. In the proposed active pixel sensor, a CMOS inverter is added. The role of the CMOS inverter is to determine either the conventional mode or the wide dynamic range mode. The cascode MOSFET let the current flow the current if the CMOS inverter is turned on. The number of pixels is 140 (H) × 180 (V) and the CMOS image sensor architecture is composed of a pixel array, multiplexer (MUX), shift registers, and biasing circuits. The sensor was fabricated using 0.35 µm 2-poly 4-metal CMOS standard process.
Abstract
In this paper, a wide dynamic range complementary metal-oxide-semiconductor (CMOS) image sensor with the adjustable sensitivity by using cascode metal-oxide-semiconductor field-effect transistor (MOSFET) and inverter is proposed. The characteristics of theCMOS image sensor were analyzed through experimental results. The proposed active pixel sensor consists of eight transistors operatedunder various light intensity conditions. The cascode MOSFET is operated as the constant current source. The current generated fromthe cascode MOSFET varies with the light intensity. The proposed CMOS image sensor has wide dynamic range under the high illu- mination owing to logarithmic response to the light intensity. In the proposed active pixel sensor, a CMOS inverter is added. The role of the CMOS inverter is to determine either the conventional mode or the wide dynamic range mode. The cascode MOSFET let the current flow the current if the CMOS inverter is turned on. The number of pixels is 140 (H) × 180 (V) and the CMOS image sensor architecture is composed of a pixel array, multiplexer (MUX), shift registers, and biasing circuits. The sensor was fabricated using 0.35 µm 2-poly 4-metal CMOS standard process.
참고문헌 (9)
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