준 2차원 시스템에서 두 방향의 광 회전 입사에 대한 GaN의 전자 변위와 상호작용에 의한 광 양자 전이 특성
Optical Quantum Transition Properties of GaN in Electron Deformation Potential Phonon Interacting Quasi Two-Dimensional System Under Two Circularly Oscillating Fields
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초록
본 논문은 광학 양자 전이 선 모양(QTRS) 및 광학 양자 전이 선 폭(QTLW)에 의한 포논 상호 작용에 따른 전자 전위 시스템의 자기장 의존 특성에 관한 연구입니다. 오른쪽 회전 광진동 외부 입력계와 왼쪽 회전 광진동 외부 입력에 따른 광학 양자 전이 특성을 검토하였다. 이 연구의 주요 목적은 두 개의 진동 외부 장에서 흡수력을 나타내는 QTLS를 비교하는 것입니다. 우리의 결과는 오른쪽 회전 진동 외부 필드의 QTLS가 왼쪽 회전 진동 외부 필드의 QTLS보다 큰 반면 QTLW에 대해서는 반대 결과가 얻어짐을 나타내었다. 본 연구의 분석을 통해 우리는 GaN의 QTLW와 QTLS 특성이 온도와 자기장에 따라 증가한다는 것을 알았으며, 또한 산란 과정이 포논 방출 전이 과정이 라는 것을 알게 되었다.
Abstract
In this paper, optical quantum transition line shapes (QTLSs) and optical quantum transition line widths (QTLWs) are studied in relation to magnetic-field-dependent properties of the electron-deformation potential phonon interaction system. We considered two systems - one was subjected to the right and the other to the left circularly oscillating external fields. The main purpose of this work was to compare the QTLSs, which indicate the absorption power in the two oscillating external fields. The results indicate that the QTLSs of the right are larger than those of the left circularly oscillating external fields, whereas the opposite holds for the QTLWs. In this study, we found that the properties of QTLW and QTLS of GaN significantly increased with increasing temperature and magnetic field strength. The phonon emission transition was found to be the dominant scattering process.
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