Graphene Oxide 첨가에 따른 Sn-3.0Ag-0.5Cu 무연솔더 접합부의 Electromigration 특성 분석
Effects of Graphene Oxide Addition on the Electromigration Characteristics of Sn-3.0Ag-0.5Cu Pb-free Solder Joints
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본 연구에서는 그래핀 산화(graphene oxide, GO) 분말 첨가가 ball grid array(BGA) 패키지와 printed circuit board(PCB)간 Sn-3.0Ag-0.5Cu(SAC305) 무연솔더 접합부의 electromigration(EM) 수명에 미치는 영향에 대하여 보고 하였다. 솔더 접합 직후, Ni/Au표면처리된 패키지 접합계면에서는 (Cu,Ni)6Sn5가 생성되었으며 organic solderability preservative(OSP) 표면처리 된 PCB 접합계면에서는 Cu6Sn5 금속간화합물(intermetallic compound, IMC)이 생성되었다. 130oC, 1.0×103 A/cm2 전류밀도 하에서 EM 수명평가 결과, GO를 첨가하지 않은 솔더 접합부의 평균 파괴 시간은 189.9 hrs으로 도출되었고, GO를 첨가한 솔더 접합부의 평균 파괴 시간은 367.1 hrs으로 도출되었다. EM에 의한 손상은 패키지 접합계면에 비하여 pad 직경이 작은 PCB 접합계면에서 전자 유입에 의한 Cu의 소모로 인하여 발생하였다. 한편, 첨가된 GO는 하부계면의 Cu6Sn5 IMC와 솔더 사이에 분포하는 것을 확인하였다. 따라서, SAC305 무연솔더에 첨가된 GO 가 전류 집중 영역에서 Cu의 빠른 확산을 억제하여 우수한 EM 신뢰성을 갖는 것으로 생각된다.
Abstract
In this study, the effects of graphene oxide (GO) addition on electromigration (EM) lifetime of Sn-3.0Ag- 0.5Cu Pb-free solder joint between a ball grid array (BGA) package and printed circuit board (PCB) were investigated. After as-bonded, (Cu,Ni)6Sn5 intermetallic compound (IMC) was formed at the interface of package side finished with electroplated Ni/Au, while Cu6Sn5 IMC was formed at the interface of OSP-treated PCB side. Mean time to failure of solder joint without GO solder joint under 130oC with a current density of 1.0×103 A/cm2 was 189.9 hrs and that with GO was 367.1 hrs. EM open failure was occurred at the interface of PCB side with smaller pad diameter than that of package side due to Cu consumption by electrons flow. Meanwhile, we observed that the added GO was distributed at the interface between Cu6Sn5 IMC and solder. Therefore, we assumed that EM reliability of solder joint with GO was superior to that of without GO by suppressing the Cu diffusion at current crowding regions.
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