Rapid Fabrication of Cu/Cu2O/CuO Photoelectrodes by Rapid Thermal Annealing Technique for Efficient Water Splitting Application
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초록
The Cu/Cu2O/CuO photoelectrode has been successfully fabricated by Rapid Thermal Annealing technique. The structural characterization of fabricated photoelectrode was performed using X-Ray diffraction, while elemental composition of the prepared material has been checked with X-Ray Photoelectron Spectroscopy. The synthesis parameters are optimized on the basis of photoelectrochemical performance. The best photoelectrochemical performance has been observed for the Cu/Cu2O/CuO photoelectrode fabricated at 550 oC oxidation temperature and oxidation time of 50 seconds with highest photocurrent density of -3 mA/cm2 at -0.13 V vs. RHE.
Abstract
The Cu/Cu2O/CuO photoelectrode has been successfully fabricated by Rapid Thermal Annealing technique. The structural characterization of fabricated photoelectrode was performed using X-Ray diffraction, while elemental composition of the prepared material has been checked with X-Ray Photoelectron Spectroscopy. The synthesis parameters are optimized on the basis of photoelectrochemical performance. The best photoelectrochemical performance has been observed for the Cu/Cu2O/CuO photoelectrode fabricated at 550 oC oxidation temperature and oxidation time of 50 seconds with highest photocurrent density of -3 mA/cm2 at -0.13 V vs. RHE.
참고문헌 (13)
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