펄스 전기도금법에 의해 제조된 n형 Bi2(Te-Se)3 박막의 Cu 도핑에 따른 열전특성에 관한 연구
Study on Thermoelectric Properties of Cu Doping of Pulse-Electrodeposited n-type Bi2(Te-Se)3 Thin Films
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Recently, Bi2Te3-based alloys are the best thermoelectric materials near to room temperature, so it has been researched to achieve increased figure of merit(ZT). Ternary compounds such as Bi-Te-Se and Bi-Sb-Te have higher thermoelectric property than binary compound Bi-Te and Sb-Te, respectively. Compared to DC plating method, pulsed electrodeposition is able to control parameters including average current density, and on/off pulse time etc. Thereby the morphology and properties of the films can be improved. In this study, we electrodeposited n-type ternary Cu-doped Bi2(Te-Se)3 thin film by modified pulse technique at room temperature. To further enhance thermoelectric properties of Bi2(Te-Se)3 thin film, we optimized Cu doping concentration in Bi2(Te-Se)3 thin film and correlated it to electrical and thermoelectric properties. Thus, the crystal, electrical, and thermoelectric properties of electrodeposited Bi2(Te-Se)3 thin film were characterized the XRD, SEM, EDS, Seebeck measurement, and Hall effect measurement, respectively. As a result, the thermoelectric properties of Cu-doped Bi2(Te-Se)3 thin films were observed that the Seebeck coefficient is −101.2 μV/K and the power factor is 1412.6 μW/mK2 at 10 mg of Cu weight. The power factor of Cu-doped Bi2(Te-Se)3 thin film is 1.4 times higher than undoped Bi2(Te-Se)3 thin film.
Abstract
Recently, Bi2Te3-based alloys are the best thermoelectric materials near to room temperature, so it has been researched to achieve increased figure of merit(ZT). Ternary compounds such as Bi-Te-Se and Bi-Sb-Te have higher thermoelectric property than binary compound Bi-Te and Sb-Te, respectively. Compared to DC plating method, pulsed electrodeposition is able to control parameters including average current density, and on/off pulse time etc. Thereby the morphology and properties of the films can be improved. In this study, we electrodeposited n-type ternary Cu-doped Bi2(Te-Se)3 thin film by modified pulse technique at room temperature. To further enhance thermoelectric properties of Bi2(Te-Se)3 thin film, we optimized Cu doping concentration in Bi2(Te-Se)3 thin film and correlated it to electrical and thermoelectric properties. Thus, the crystal, electrical, and thermoelectric properties of electrodeposited Bi2(Te-Se)3 thin film were characterized the XRD, SEM, EDS, Seebeck measurement, and Hall effect measurement, respectively. As a result, the thermoelectric properties of Cu-doped Bi2(Te-Se)3 thin films were observed that the Seebeck coefficient is −101.2 μV/K and the power factor is 1412.6 μW/mK2 at 10 mg of Cu weight. The power factor of Cu-doped Bi2(Te-Se)3 thin film is 1.4 times higher than undoped Bi2(Te-Se)3 thin film.
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