a-plane 사파이어기판에 증착된 Polycrystalline Diamond 박막의 특성
Characteristics of a polycrystalline diamond thin film deposited on a-plane sapphire substrate
1
조회
0
다운로드
1
인용
0
참고문헌
키워드
초록
In this study, polycrystalline diamond was synthesized by chemical vapor deposition (CVD). Diamond films were deposited on a-plane sapphire substrates while changing the concentration of methane for hydrogen (CH4/H2), and the concentrations of methane were 0.25, 0.5, 1, 2, 3 and 4 vol%, respectively. Crystallinity and nucleation density according to changes in methane concentration were investigated. At this time, the discharge power, vacuum pressure, and deposition time were kept constant. In order to deposit polycrystalline diamond, the sapphire substrate was etched with sulfuric acid and hydrogen peroxide (ratio 3:7), and the sapphire surface was polished for 30 minutes with 100 nm-sized nanodiamond particles. The deposited diamond thin film was analyzed by a scanning electron microscope (SEM), a Raman spectra, Atomic force microscope (AFM) and an X-ray diffractometer (XRD). By controlling the ratio of methane to hydrogen and performing appropriate pre-treatment conditions, a polycrystalline diamond thin film having excellent crystallinity and nucleation density was obtained.
Abstract
In this study, polycrystalline diamond was synthesized by chemical vapor deposition (CVD). Diamond films were deposited on a-plane sapphire substrates while changing the concentration of methane for hydrogen (CH4/H2), and the concentrations of methane were 0.25, 0.5, 1, 2, 3 and 4 vol%, respectively. Crystallinity and nucleation density according to changes in methane concentration were investigated. At this time, the discharge power, vacuum pressure, and deposition time were kept constant. In order to deposit polycrystalline diamond, the sapphire substrate was etched with sulfuric acid and hydrogen peroxide (ratio 3:7), and the sapphire surface was polished for 30 minutes with 100 nm-sized nanodiamond particles. The deposited diamond thin film was analyzed by a scanning electron microscope (SEM), a Raman spectra, Atomic force microscope (AFM) and an X-ray diffractometer (XRD). By controlling the ratio of methane to hydrogen and performing appropriate pre-treatment conditions, a polycrystalline diamond thin film having excellent crystallinity and nucleation density was obtained.
참고문헌 (6)
- Yi-Chun Chen, "Chemical vapor deposition of diamond on an adamantane-coated sapphire substrate", RSC Adv., 4, pp.18945~18950 (2014)
- Mamoru Yoshimoto, "Epitaxial diamond growth on sapphire in an oxidizing environment", Nature, 399, pp.340~342 (1999)
- Yutaka Ando, "Epitaxial lateral overgrowth of diamonds on Iridium by patterned nucleation and growth method", Jpn. J. Appl. Phys, 51, pp.090101~ (2012)
- J,S Kim, "Characteristics of deposited boron doping diamond on tungsten carbide insert by MPECVD", Modern Physics Letters B, 29(6& 7), pp.150048~ (2015)
- Y.M. Park, "Low temperature growth of CVD nanocrystalline diamond thin film by designed SWP-CVD with various working pressures", Nanoscience and Nanotechnology Letters, 11, pp.1292~1297 (2019)
- Takeyasu Saito, "Epitaxial nucleation of diamond on an iridium substrate by bias treatment, for microwave plasma-assisted chemical vapor deposition", Diamond and Related Materials, 7, pp.1381~1384 (1998)
