식각공정의 신뢰성 향상을 위한 모니터링 기술에 관한 연구
A Study on Monitoring Technology to Improve the Reliability of Etching Processes
0
조회
0
다운로드
0
인용
0
참고문헌
키워드
초록
With the development of industry, miniaturization and densification of semiconductor components are rapidly progressing. Particularly, as demand surges across various sectors, efficiency in productivity has emerged as a crucial issue in semiconductor component manufacturing. Maximizing semiconductor productivity requires real-time monitoring of semiconductor processes and continuous reflection of the results to stabilize processes. However, various unexpected variables and errors in judgment that occur during the process can cause significant losses in semiconductor productivity. Therefore, while the development of a reliable manufacturing system is important, the importance of developing sensor technology that can complement this and accurately monitor the process is also growing. In this study, conducted a basic research on the concept of diagnostic sensors for thickness based on the physical changes of thin films due to etching. It observed changes in resistance corresponding to variations in thin film thickness as etching processes progressed, and conducted research on the correlation between these physical changes and thickness variations. Furthermore, to assess the reliability of thin film thickness measurement sensors, it conducted multiple measurements and comparative analyses of physical changes in thin films according to various thicknesses.
Abstract
With the development of industry, miniaturization and densification of semiconductor components are rapidly progressing. Particularly, as demand surges across various sectors, efficiency in productivity has emerged as a crucial issue in semiconductor component manufacturing. Maximizing semiconductor productivity requires real-time monitoring of semiconductor processes and continuous reflection of the results to stabilize processes. However, various unexpected variables and errors in judgment that occur during the process can cause significant losses in semiconductor productivity. Therefore, while the development of a reliable manufacturing system is important, the importance of developing sensor technology that can complement this and accurately monitor the process is also growing. In this study, conducted a basic research on the concept of diagnostic sensors for thickness based on the physical changes of thin films due to etching. It observed changes in resistance corresponding to variations in thin film thickness as etching processes progressed, and conducted research on the correlation between these physical changes and thickness variations. Furthermore, to assess the reliability of thin film thickness measurement sensors, it conducted multiple measurements and comparative analyses of physical changes in thin films according to various thicknesses.
참고문헌 (14)
- N.G. Orji, "Metrology for the next generation of semiconductor devices", Nature Electronics, 1, pp.532~547 (2018)
- I. H. Seong, "Characterization of SiO2over poly-Si mask etching in Ar", C4F8capacitively coupled plasma, 2021, pp.30, 176~182
- D. S. Kim, "Anisotropic", Isotropic atomic layer etching of metals, 2020, pp.29, 41~49
- H. T. Huang, "Spectroscopic ellipsometry and reflectometry from gratings (scatterometry) for critical dimension measurement and in situ, real-time process monitoring", Thin Solid Films, 455-456, pp.828~836 (2004)
- H. G. Jang, "Real-time plasma process monitoring with impedance analysis and optical emission spectroscopy", Journal of the Korean Vacuum Society, 02a, pp.473~ (2010)
- K. Kitagawa, "Thin-film thickness profile measurement by three-wavelength interference color analysis", Applied Optics, 52, pp.1998~2007 (2013)
- F.F. Chen, "Langmuir probe diagnostics, In: mini-course on plasma diagnostics", IEEE International Conference on Plasma Science, pp.20~111 (2023)
- V. Godyak, "Comments on plasma diagnostics with microwave probes", Physics of Plasmas, 24, pp.060702~ (2017)
- K. Tsumori, "Diagnostics tools and methods for negative ion source plasmas, a review", New Journal of Physics, 19, pp.045002~ (2017)
- S.Y. Park, "A data mining technique for real time process monitoring with mass spectrometry: APC:Advanced process control", IEEE, 2020, 1~4
- T.M. Kim, "A study on the real-time flow rate change monitoring methods of mass flow controller in in-situ semiconductor processing", IEEE, 2021, 1~4
- M. H. Hung, "A novel virtual metrology scheme for predicting CVD thickness in semiconductor manufacturing", IEEE, 2007, pp.12, 308~316
- P. Kang, "A virtual metrology system for semiconductor manufacturing", Expert Systems with Applications, 36, pp.12554~12561 (2009)
- J. H. Kang, "Development of a thickness meter for conductive thin films using four-point probe method", Journal of Electrical Engineering & Technology, 16, pp.2265~2273 (2021)