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EPR Lineshape and g-Factor of the Single Crystal MnXSi1-X

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Abstract

We have measured the linewidth and g-factor of EPR signals of the single crystal MnXSi1-X as a function of Mn-composition (0.4 < x < 0.9). We have investigated the linewidth of Mn0.49Si0.51 as a function of temperature (100  T  300 K). From these results EPR linewidth equation could be fitted for experimental data of EPR linewidth. This type of equation is similar to the shape of EPR linewidth of DMS (dulite magnetic semiconductor).

참고문헌 (5)

  1. D. Bloch, "Phys. Lett. 51A, 259(1975)", Phys. Lett. (1975)
  2. K. Moriwaki, "Report in Phys. Soc. Japn Meeting, April(1976)", Soc. Japn Meeting (1976)
  3. M. Kohgi, "Report in Phys", Soc. Japan Meeting (1975)
  4. M. C. Aronson, "Physical Review B 34, 4645(1986)", Physical Review B, 34, pp.4645~ (1986)
  5. P. K. Son, "Journal Korea Phys. Society. 37, 287(2000)", Journal Korea Phys. Society., 37, pp.287~ (2000)

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