Cyclotron resonance line shape of semiconductor ZnO considering nonlinearity
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The projected quantum Liouville equation method was used to investigate the dependence of the line-width of cyclotron resonance in a semiconductor material on magnetic field, revealing transitions within Landau levels. Direct application of this method to the semiconductor material ZnO, which considers electron-piezoelectric phonon interactions, revealed that the line-widths increase with increasing magnetic field. However, the increase in line-widths abruptly slows around 7 T, followed by a slight decrease around 10 T, likely due to the interaction between the magnetic field and distribution function.
Abstract
The projected quantum Liouville equation method was used to investigate the dependence of the line-width of cyclotron resonance in a semiconductor material on magnetic field, revealing transitions within Landau levels. Direct application of this method to the semiconductor material ZnO, which considers electron-piezoelectric phonon interactions, revealed that the line-widths increase with increasing magnetic field. However, the increase in line-widths abruptly slows around 7 T, followed by a slight decrease around 10 T, likely due to the interaction between the magnetic field and distribution function.