Effect of Amplified Spontaneous Emission on the Gain Recovery of a Semiconductor Optical Amplifier
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The impact of the amplified spontaneous emission (ASE) on the gain recovery time of a bulk semiconductor optical amplifier (SOA) is investigated. The gain-recovery time is obtained by determining the time evolution of the gain, carrier density, and ASE in an SOA, after the propagation of a short pump pulse and continuous-wave (CW) probe of gain dynamics. In the simulation, a wide-band-semiconductor model, which can be characterized by the material gain coefficient over a wide wavelength range, is used, because the gain bandwidth of a practical SOA is very wide. The pump pulse and counterpropagating CW probe field are considered in the simulation, with the ASE noise spectrum equally divided.
Abstract
The impact of the amplified spontaneous emission (ASE) on the gain recovery time of a bulk semiconductor optical amplifier (SOA) is investigated. The gain-recovery time is obtained by determining the time evolution of the gain, carrier density, and ASE in an SOA, after the propagation of a short pump pulse and continuous-wave (CW) probe of gain dynamics. In the simulation, a wide-band-semiconductor model, which can be characterized by the material gain coefficient over a wide wavelength range, is used, because the gain bandwidth of a practical SOA is very wide. The pump pulse and counterpropagating CW probe field are considered in the simulation, with the ASE noise spectrum equally divided.
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