MEMS 가속도센서를 위한 CMOS Readout 회로
CMOS ROIC for MEMS Acceleration Sensor
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초록
본 논문에서는 MEMS(Micro Electro Mechanical System) 가속도센서를 위한 CMOS readout 회로를 설계하였다. 설계된 CMOS readout 회로는 MEMS 가속도 센서, 커패시턴스-전압 변환기(CVC), 그리고 2차 스위치드 커패시터 ∑∆ 변조기로 구성된다. 이들 회로에는 저주파 잡음과 오프셋을 감소시키기 위한 correlated-double- sampling(CDS)와 chopper-stabilization(CHS) 기법이 적용되었다. 설계 결과 CVC는 150mV/g의 민감도와 0.15%의 비선형성을 갖는다. 설계된 ∑∆ 변조기는 입력전압 진폭이 100mV가 증가할 때, 출력의 듀티 싸이클은 10%씩 증가하며, 0.45%의 비선형성을 갖는다. 전체 회로의 민감도는 150mV/g이며, 전력소모는 5.6mW이다. 제안된 회로는 CMOS 0.35um 공정을 이용하여 설계하였고, 공급 전압은 3.3V이며, 동작 주파수는 2MHz이다. 설계된 칩의 크기는 PAD를 포함하여 0.96mm×0.85mm이다.
Abstract
This paper presents a CMOS readout circuit for MEMS(Micro Electro Mechanical System) acceleration sensors. It consists of a MEMS accelerometer, a capacitance to voltage converter(CVC) and a second-order switched-capacitor ∑∆ modulator. Correlated-double-sampling(CDS) and chopper-stabilization(CHS) techniques are used in the CVC and ∑∆ modulator to reduce the low-frequency noise and DC offset. The sensitivity of the designed CVC is 150mV/g and its non-linearity is 0.15%. The duty cycle of the designed ∑∆ modulator output increases about 10% when the input voltage amplitude increases by 100mV, and the modulator’s non-linearity is 0.45%. The total sensitivity is 150mV/g and the power consumption is 5.6mW. The proposed circuit is designed in a 0.35um CMOS process with a supply voltage of 3.3V and a operating frequency of 2MHz. The size of the designed chip including PADs is 0.96mm×0.85mm.
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