후열처리 공정을 통한 양자점 전계 발광다이오드의전하 균형 향상 연구
Study on Charge Balance Improvement in Electro luminescence Quantum Dot Light-Emitting Diodes through Post-Annealing Process
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초록
후열처리(Post-Annealing) 공정은 소자 제작 후 추가적인 열을 가하는 것으로 소자의 안정성을 높이고 성능을 개선시키는 방안으로 연구되고 있다. 소자의 구조에 따라 공정조건과 결과가 다르게 나타나기에 그 원인을 규명할 필요가 있다. 본 연구에서는Post-Annealing 공정이 전하의 흐름에 미치는 영향을 조사했다. 연구 결과 최대 외부 양자 효율(External Quantum Efficiency;EQE)과 전류효율(Current Efficiency)이 각각 118 %, 120 %, 최대 휘도는 1000 nit 상승하였으며, 전압 당 전류밀도는 줄어들었다. 이는 전자 주입의 향상으로 인해 발광층으로 공급되는 전하의 균형이 향상되는 것과, 에폭시 레진의 Thiol 분자가 열에 의해하부층으로 확산되어 Quantumdot(QD)의 photoluminescence(PL)성능을 향상시키기 때문으로 특정된다
Abstract
The Post-Annealing process, which involves applying additional heat after device fabrication, is being studied asa method to enhance device stability and improve performance. Since the process conditions and outcomes varydepending on the device structure, it is necessary to identify the underlying causes. In this study, the effects of thePost-Annealing process on charge transport were investigated. The results showed that the maximum ExternalQuantum Efficiency and Current Efficiency increased by 118% and 120%, respectively, while the maximumluminance improved by 1000 nits. Additionally, the current density per voltage decreased. This is attributed to theimprovement in charge balance supplied to the emissive layer due to enhanced electron injection, as well as thediffusion of thiol molecules from the epoxy resin into the underlying layers under heat, which enhances thephotoluminescence performance of Quantum Dots.
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