r면 사파이어 위에 HVPE로 성장된 a면 GaN 에피층의 성장온도 효과 및 1000oC 에서의 V/III족 비의 효과
The effects of growth temperatures and V/III ratios at 1000oC for a-plane GaN epi-layer on r-plane sapphire grown by HVPE
2
조회
0
다운로드
1
인용
0
참고문헌
초록
Ga source 채널의 HCl flow가 700 sccm, 그리고 V/III족 비가 10으로 고정되었을 때, r-면 사파이어 위에 HVPE 로 성장된 a-면 GaN 에피층 특성에 대한 성장 온도 영향을 연구하였다. 추가적으로 성장온도가 1000 o C, 그리고 Ga source 채널의 HCl flow가 700 sccm으로 고정되었을 때, 공급가스에 대한 V/III족 비 영향에 대하여 연구하였다. 성장온도가 높아지면서, a-면 GaN 에피층에 대한 (11-20) 면의 Rocking curve(RC)의 반치폭 값이 감소하였고 a-면 GaN 에피층의 성장두께는 증가하였다. 1000 o C에서 V/III족 비가 높아짐에 따라, (11-20) 면의 RC의 반치폭 값이 감소하였고, a-면 GaN 에피층의성장두께가 증가하였다. 1000 o C와 V/III족 비=10에서 성장된 a-면 GaN 에피층이 (11-20) 면에서 가장 낮은 RC 반치폭인734 arcsec을 보이며, RC측정을 통한 (11-20) 면의 방위각 가장 작은 영향을 보여준다.
Abstract
The effects of the growth temperature on the properties of a-plane GaN epi-layer on r-plane sapphire by HVPE were studied, when the constant V/III ratio and the flow rate of HCl for the Ga source channel was fixed at 10 and 700 sccm, respectively. Additionally the effects of V/III ratios for source gasses were studied when growth temperature and the flow rate of HCl for the Ga source channel was fixed at 1000oC and 700 sccm, respectively. As the growth temperature was increased, the values of Full Width Half Maximum (FWHM) for Rocking curve (RC) of a-plane GaN (11-20) epilayer were decreased and thickness of a-plane GaN epi-layer were increased. As V/III ratios were increased at 1000oC, the values of FWHM for RC of a-plane GaN (11-20) were declined and thickness of a-plane GaN epi-layer were increased. The a-plane GaN (11-20) epi-layer grown at 1000oC and V/III ratio = 10 showed the lowest value FWHM for RC of aplane GaN (11-20) for 734 arcsec and the smallest dependence of Azimuth angle for FWHM of (11-20) RCs.
참고문헌 (20)
- J.J. Jang, "Current status of non-", semi-polar GaN based light emitting diodes, 2011, pp.1, 1~
- S. Nakamura, "High-power GaN P-N junction blue-light-emitting diodes", Jpn. J. Appl. Phys, 30, pp.L1998~ (1991)
- S. Nakamura, "InGaN", GaN, Mater. Sci. Eng. B, pp.1999, 59[DOI]
- S.J. Pearton, "GaN:Processing, defects, and devices", J. Appl. Phys, 86, pp.1~ (1999)
- S. Nakamura, "The blue laser diodes" (1997), Springer
- T. Palacios, "Nitride-based high electron mobility transistors with a GaN spacer", Appl. Phys. Lett, 89, pp.073508~ (2006)
- T. Deguchi, "Quantum-confined Stark effect in an AlGaN", GaN, Jpn. J. Appl. Phys, pp.1999, 38[DOI]
- S. Ghosh, "Electronic band structure of wurtzite GaN under biaxial strain in the M plane investigated with photoreflectance spectroscopy", Phys. Rev. B, 65, pp.075202~ (2002)
- 강진기, "Fabrication and characterization of tilted R-plane sapphire wafer for nonpolar a-plane GaN", 한국결정성장학회지, 21(5), pp.187~192 (2011), 한국결정성장학회
- K. Domen, "Analysis of polarization anisotropy along the c-axis in the photoluminescence of wurtzite GaN", Appl. Phys. Lett, 71, pp.1996~ (1997)
- P. Waltereit, "Nitride semiconductors free of electrostatic fields for efficient white light-emitting diodes", Nature, 406, pp.865~ (2002)
- A. Chitnis, "Visible light-emitting diodes using a-plane GaN-InGaN multiple quantum wells over r-plane sapphire", Appl. Phys. Lett, 84, pp.3663~ (2004)
- Y.H. Wu, "A simple growth method to produce aplane GaN thick films by hydride vapor phase epitaxy", Jpn. J. Appl. Phys, 52, pp.08JB08~ (2013)
- H. M. Wang, "Anisotropic structural characteristics of (110)GaN templates and coalesced epitaxial lateral overgrown films deposited on (102) sapphire", Appl. Phys. Lett, 84, pp.499~ (2004)
- K. Kusakabe, "Morphological characteristics of a-plane GaN grown on r-plane sapphire by metalorganic vapor-phase epitaxy", Jpn. J. Appl. Phys, 44(11), pp.7931~ (2005)
- T. S. Ko, "Study on optimal growth conditions of a-plane GaN grown on r-plane sapphire by metal-organic chemical vapor deposition", J. Cryst Growth, 300, pp.308~ (2007)
- 하주영, "r-Plane sapphire 위에 HVPE에 의해 성장한 a-plane GaN에피텍셜층의 V", III족 ratio에 따른 특성 변화, 2014, pp.24(3), 89~93[DOI]
- Stephan Schwaiger, "Influence of slight misorientations of r-plane sapphire substrates on the growth of nonpolar a-plane GaN layers via HVPE", Phys. Status Solidi C, 7(7-8), pp.2069~ (2010)
- T. Paskova, "High-quality bulk a-plane GaN sliced from boules in comparison to heteroepitaxially grown thick films on r-plane sapphire", Appl. Phys. Lett, 89, pp.051914~ (2006)
- T. Paskova, "Nonpolar a-plane HVPE GaN growth and in-plane anisotropic properties", J. Cryst. Growth, 281, pp.55~ (2005)