논문KCI 등재
Scintillating properties of Bi-doped Y3Ga5O12
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참고문헌
주제분류재료공학
초록
Abstract
Shaped single crystals of Bi : Y3Ga5O12 (Bi = 0.041, 0.047 and 0.061 mol%) were grown by the micro-pulling-down method. Optical absorption spectra show an absorption band at 288 nm ascribed to the lowest energy 6s2 6s6p transition of Bi3+, while luminescence spectra demonstrate the band at 314 nm ascribed to the reverse radiative transition of the excited Bi3+ centres. At room temperature, dominant decay time component was found to be about 440 ns with a minor slower component 580 ns.
참고문헌 (9)
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